Triple-band near-infrared absorber based on semiconductor metasurface structure

A semiconductor and metasurface technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve perfect absorption effect, reduce sensitivity, easy preparation and integration

Inactive Publication Date: 2019-09-06
JIANGXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, how to break through the structural defects of existing electromagnetic wave absorbers in the absence of semiconductor materials and construct absorbers based on the electromagnetic resonance characteristics of semiconductor materials is a scientific and technical bottleneck faced by researchers at home and abroad.

Method used

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  • Triple-band near-infrared absorber based on semiconductor metasurface structure
  • Triple-band near-infrared absorber based on semiconductor metasurface structure
  • Triple-band near-infrared absorber based on semiconductor metasurface structure

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Embodiment 1: see figure 1 Shown is the schematic diagram of the three-band near-infrared absorber based on the semiconductor metasurface structure in this embodiment, which includes a bottom-up arrangement consisting of a substrate 1, a metal film layer 2, and a semiconductor metasurface structure layer, and the metal material is silver , the semiconductor material is single crystal silicon, the thicknesses of the metal film layer 2 and the semiconductor film layer 3 are 100nm and 30nm respectively. The semiconductor particle 4 is a silicon cube-shaped structure with a side length of 450 nm and a height of 20 nm. The silicon cube array is arranged in a triangle with a period size of 800nm. refer to figure 2 As shown, the results of the absorber's absorptivity changing with wavelength show that there are three light absorption peaks in the near-infrared band, and the maximum light absorption rate of the three light absorption peaks reaches 99% and the minimum light ...

Embodiment 2

[0047] Embodiment 2: see image 3 Shown is the light absorption diagram of the triple-band near-infrared absorber based on the semiconductor metasurface structure in this embodiment. The semiconductor material is single crystal silicon, the metal material is silver, the thickness of the metal film layer 2 is 100nm, and the thickness of the semiconductor film layer 3 is 40nm. The semiconductor particle 4 is a silicon cube-shaped structure with a side length of 450 nm and a height of 20 nm. The silicon cube array is arranged in a triangle with a period size of 800nm. It can be seen from the figure that although the thickness of the semiconductor film in the absorber increases, the perfect absorption of the 3-band light is still maintained, and the maximum light absorption rate reaches 99%.

Embodiment 3

[0048] Embodiment 3: see Figure 4 Shown is the light absorption diagram of the triple-band near-infrared absorber based on the semiconductor metasurface structure in this embodiment. The semiconductor material is single crystal silicon, the metal material is silver, the thickness of the metal film layer 2 is 100nm, and the thickness of the semiconductor film layer 3 is 30nm. The semiconductor particle 4 is a silicon cube-shaped structure with a side length of 400 nm and a height of 20 nm. The silicon cube array is arranged in a triangle with a period size of 750nm. It can be seen from the figure that by adjusting the semiconductor particle size and lattice period in the absorber, such as using a small semiconductor cube and a small array period, the perfect absorption of 3-band light still appears on the spectrum, and the maximum light absorption rate also reaches 99%.

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Abstract

The invention discloses a three-band near-infrared absorber based on a semiconductor metasurface structure, belonging to the field of metamaterials. The absorber is sequentially composed of a substrate, a metal film layer and a semiconductor supersurface structure layer from bottom to top, and the supersurface structure layer is composed of a semiconductor particle array and a semiconductor film layer. The invention can completely absorb electromagnetic waves incident on the surface of the structure by rationally designing the geometric size and lattice period of the semiconductor metasurface structure. This semiconductor metasurface-based absorber has the characteristics of simple structure, near-infrared band absorption, and three absorption peaks. In addition, the semiconductor material used in the structure as the electromagnetic wave absorption functional layer not only overcomes the traditional metal resonance unit that can only produce The limitation of a single resonance absorption peak also facilitates the expansion of the application prospects of such absorbers in the fields of photoelectric detection, photoelectric conversion, generation and collection of photogenerated electrons and thermal electrons, and electromagnetic energy absorption.

Description

technical field [0001] The invention relates to the fields of metamaterials, nanophotonics and optoelectronic materials, and in particular to a triple-band near-infrared absorber based on a semiconductor metasurface structure. Background technique [0002] In the electromagnetic spectrum, the infrared band is usually divided into near-infrared (0.76 mu m~2.5 mu m), mid-infrared (2.5 mu m~25 mu m) and far infrared (25 mu m~1000 mu m) Three frequency bands. The near-infrared spectrum region is consistent with the combined frequency of the vibration of hydrogen-containing groups (O-H, N-H, C-H) in organic molecules and the absorption region of all levels of frequency multiplication. By scanning the near-infrared spectrum of the sample, the hydrogen-containing groups of organic molecules in the sample can be obtained. The characteristic information of the group, and the use of near-infrared spectroscopy to analyze samples has the advantages of convenience, speed, efficienc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/09
Inventor 刘正奇刘桂强刘晓山
Owner JIANGXI NORMAL UNIV
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