Manufacturing method of transistor
A manufacturing method and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as unstable device amplification factors, and achieve the effect of stabilizing current amplification factors
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Embodiment 1
[0014] see figure 1 and figure 2 , a method for manufacturing a transistor, comprising:
[0015] Step S01: providing a substrate 1 of a first conductivity type;
[0016] Step S02: growing an epitaxial layer 2 with a second conductivity type on the first surface of the substrate 1;
[0017] Step S03: forming a first trench a1 in the epitaxial layer 2, the first trench a1 passing through the epitaxial layer 2 and connecting to the substrate 1 at one end;
[0018] Step S04: forming a sidewall b1 on the sidewall of the epitaxial layer 2, the sidewall b1 is formed in the trench and one end thereof is in contact with the substrate 1;
[0019] Step S05: forming an emitter region 3 in the trench; the emitter region 3 includes a first isolation layer 31, an emitter layer 32 and a second isolation layer 33 sequentially formed upward on the first surface of the substrate 1 ;
[0020] Step S06: removing the sidewall b1 to form a base trench a2; forming a base region 4 of the first c...
Embodiment 2
[0036] see figure 2 , a transistor manufactured based on the manufacturing method in Embodiment 1, comprising: a substrate 1 of a first conductivity type; an epitaxial layer 2 of a second conductivity type grown on the first surface of the substrate 1; a first Conductive type base region 4, which runs through the epitaxial layer 2 and is connected to the substrate 1 at one end, so that the epitaxial layer 2 forms an emitter region 3 and a collector region 52; the emitter region 3 is included in the substrate The first isolation layer 31, the emitter layer 32 and the second isolation layer 33 are sequentially formed on the first surface of 1. It can be understood that by adopting a three-layer epitaxial structure, the emitter layer 32 and the base region 4 The contact interface of the contact interface does not need to go through processes such as high-temperature rapid annealing and ion implantation in the subsequent manufacturing process, so the emitter interface will not be...
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Abstract
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