ion implantation method

A technology of ion implantation and ion implanter, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., and can solve problems such as long test time, uncontrollable metal pollution, and high cost

Active Publication Date: 2021-10-15
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology

[0006] At present, the ion implanter usually monitors the metal molybdenum by measuring the metal content of the control chip through an inductively coupled plasma analyzer (ICPMS). The ICPMS test has long test time, high cost, easy to be affected by the quality of the control chip, and test stability. Poor and unable to control metal contamination

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Embodiment Construction

[0022] The technical solutions in the present invention will be described in conneffled and complete, and embodiments, below, will be described below, as will be described in connection with the accompanying drawings. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative labor are the scope of the present invention.

[0023] In an embodiment of the invention, an ion implantation method includes: an isotope ion source gas BF3 composed of isotopes of boron and / or fluorine, as an ion-injection machine, an ion injector ion source gas BF3 ionization forms BF2 + doped ions, wherein the difference in equivalent mass or charge ratio of BF2 + doped ions is not less than 1.

[0024] The mass spectrometer analysis of the ion injecting machine is the main component of ion-screening in the ion implantation machine. See figure 1 , figure 1 A schematic diagram of the magnetic field for mass spectrometers....

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Abstract

The invention relates to an ion implantation method, which relates to the manufacturing technology of semiconductor integrated circuits. BF3 is ionized to form BF2+ dopant ions to increase or decrease the equivalent mass-to-charge ratio of BF2+ dopant ions formed by ionization of ion source gas BF3 by the ion implanter. When the excitation current of the analysis magnetic field is adjusted to a current, It is easier to separate BF2+ doping ions from molybdenum metal Mo2+, and when doping ions are implanted into the wafer, it will not bring molybdenum metal Mo2+ pollution.

Description

Technical field [0001] The present invention relates to a semiconductor integrated circuit manufacturing technique, and more particularly to an ion implantation method. Background technique [0002] In the semiconductor integrated circuit manufacturing technology, the doping process introduced to the semiconductor into a designated impurity is one of the key steps. The doping process includes a diffusion process and an ion implantation process, wherein the diffusion process is gradually replaced by the ion implantation process due to the coarse doping control, the occurrence of wafer surface dislocation. The ion implantation process can better control the position and quantity of the inner doped in the wafer. During the ion implantation process, the ion source gas is alleviated, separated, accelerated (obtaining kinetic energy), forming a doped ion beam, sweeping over the wafer. Doped ions are physically bombarded by wafer, and a Gaussian distribution is generated on the wafer su...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265
CPCH01L21/265
Inventor 伍菲菲时锋袁立军
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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