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EUV patterning using photomask substrate topography

A photomask and patterning technology, which is applied in the direction of originals for photomechanical processing, optics, photosensitive material processing, etc., can solve problems such as limit resolution and resolution limitations

Inactive Publication Date: 2019-03-05
GLOBALFOUNDRIES U S INC MALTA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In either case, the limiting resolution at the end of the line is limited by the resolution achievable with absorber-based masking techniques

Method used

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  • EUV patterning using photomask substrate topography
  • EUV patterning using photomask substrate topography
  • EUV patterning using photomask substrate topography

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Embodiment Construction

[0031] The following detailed description of the devices and methods represented in the drawings is not intended to limit the scope defined by the appended claims, but is merely representative of selected devices and methods. The following description is intended to be exemplary only and briefly illustrates certain concepts of the devices and methods disclosed and claimed herein.

[0032]As mentioned above, the line-end-to-line (also called end-to-end) pattern where two patterned lines intersect and are separated by a small width is a key construct in lithography. Achieving the required small spacing has been a challenge for conventional photolithography. Traditional EUV photomasks use several light-absorbing layers above a reflective blank to define the photolithographic pattern. Typically, the line-end-to-line-end spacing is formed either from exposure of a single mask or from exposure of lines from one photomask and generation of the line-ends through a second "dicing" mas...

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Abstract

A photomask includes a substrate having a top surface. A topographical feature is formed on the top surface of the substrate. The topographical feature may be a bump or a pit created on the top surface of the substrate. A reflector is formed on the top surface of the substrate over the topographical feature. The topographical feature warps the reflector in order to generate phase and / or amplitudegradients in light reflected off the reflector. An absorber is patterned on the reflector defining lithographic patterns for a resist material. The gradients in the light reflected off the reflector create shadow regions during lithography of the resist material using extreme ultraviolet (EUV) light.

Description

technical field [0001] The present invention relates to the field of semiconductor integrated circuit (integrated circuit; IC) manufacture, relate in particular to a kind of by using the photomask that changes the phase and / or amplitude of the light of extreme ultraviolet (extreme ultraviolet; EUV) lithography to reduce the distance between lines The end-to-end spacing method. Background technique [0002] Photolithography is commonly used in semiconductor manufacturing to fabricate miniaturized electronic components such as integrated circuits. In photolithography, a photoresist layer is deposited on a substrate such as a silicon wafer. The substrate is baked to remove any solvent remaining in the photoresist layer. Next, the photoresist is selectively exposed to a radiation source through a photomask having the desired pattern. The radiation exposure causes a chemical reaction in the exposed areas of the photoresist and produces a latent image in the photoresist layer c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/52G03F1/54G03F1/24
CPCG03F1/24G03F1/52G03F1/54G03F1/36G03F1/72G03F1/84G03F7/40H01L21/0337H01L21/32139
Inventor E·韦尔迪恩陈宇路拉尔斯·赖柏曼帕伟特·麦盖特
Owner GLOBALFOUNDRIES U S INC MALTA