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A kind of perovskite film and its preparation method and application

A perovskite and perovskite precursor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low performance of light-emitting devices, small cesium ion radius, and small exciton binding energy. Achieve the effect of improving coverage and regularity, promoting grain size, and simple method

Active Publication Date: 2020-04-28
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In terms of red light, there are mainly two types of perovskite materials at this stage, one is organic-inorganic hybrid perovskite materials, namely APbI 3 (A=CH 3 NH 3 , HC(NH 2 ) 2 ) type materials, due to the faster grain production, larger size, smaller exciton binding energy, and low exciton radiative recombination efficiency in the one-step spin coating process, resulting in lower performance of light-emitting devices
Another class of all-inorganic perovskite materials (CsPbI 3 ) has good thermal stability, but the radius of cesium ions is small, the perovskite lattice tolerance factor deviates from 1, and the crystal packing is incomplete, which leads to a decrease in the transient lifetime of the excitons of the light-emitting device and reduces the performance of the light-emitting device

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  • A kind of perovskite film and its preparation method and application
  • A kind of perovskite film and its preparation method and application
  • A kind of perovskite film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] A kind of preparation method of perovskite film, comprises the following steps:

[0048] (1) Add 0.3mmol (138.3mg) lead iodide to 1mL dimethylformamide (DMF) solvent, heat 50°C in the glove box to dissolve lead iodide, and prepare 0.3mmol / mL lead iodide ( PB 2 ) solution;

[0049] (2) Add 0.2835mmol (73.65mg) cesium iodide (CsI) and 0.0315mmol (8.974mg) 1-naphthylmethylammonium iodide (NMAI) into the lead iodide solution, stir at 50°C for 12h to obtain NMAI doped Mixed perovskite precursor solution;

[0050] (3) Add 12 mg of polyethylene oxide into 2 mL of dimethylformamide solvent, heat in a glove box at 50°C to dissolve the polyethylene oxide, and prepare a 6 mg / mL polyethylene oxide solution;

[0051] (4) Mix the NMAI-doped perovskite precursor solution and the polyethylene oxide solution in equal volumes, and stir at 50° C. for 2 hours to obtain a mixed solution;

[0052] (5) Perform one-step spin coating of the mixed solution, the speed of the homogenizer is 60...

Embodiment 2

[0055] A kind of preparation method of perovskite film, comprises the following steps:

[0056] (1) Take 0.3mmol (138.3mg) of lead iodide in 1mL of dimethylformamide (DMF) solvent, heat in a glove box at 50°C to dissolve lead iodide, and prepare a 0.3mmol / mL lead iodide solution ;

[0057] (2) Add 0.2520mmol (65.47mg) cesium iodide (CsI) and 0.063mmol (17.95mg) 1-naphthylmethylammonium iodide (NMAI) to the lead iodide solution, stir overnight at 50°C (12h) , to obtain NMAI-doped perovskite precursor solution;

[0058] (3) Put 12mg of polyethylene oxide in 2mL of dimethylformamide solvent, heat 50°C in the glove box to dissolve the polyethylene oxide, and prepare a 6mg / mL polyethylene oxide solution;

[0059] (4) Mix the NMAI-doped perovskite precursor solution and the polyethylene oxide solution in equal volumes, and stir at 50° C. for 2 hours to obtain a mixed solution;

[0060] (5) Perform one-step spin coating of the mixed solution, the speed of the homogenizer is 6000rp...

Embodiment 3

[0063] A kind of preparation method of perovskite film, comprises the following steps:

[0064] (1) Take 0.3mmol (138.3mg) of lead iodide in 1mL of dimethylformamide (DMF) solvent, heat in a glove box at 50°C to dissolve lead iodide, and prepare a 0.3mmol / mL lead iodide solution ;

[0065] (2) 0.2394mmol (62.20mg) cesium iodide (CsI), 0.0599mmol (10.29mg) formamidine hydroiodide (FAI), 0.0158mmol (4.487mg) 1-naphthylmethylammonium iodide (NMAI) And adding it to the lead iodide solution, stirring overnight (12h) at 50°C to obtain a NMAI-doped perovskite precursor solution;

[0066] (3) Put 12mg of polyethylene oxide in 2mL of dimethylformamide solvent, heat 50°C in the glove box to dissolve the polyethylene oxide, and prepare a 6mg / mL polyethylene oxide solution;

[0067] (4) Mix the NMAI-doped perovskite precursor solution and the polyethylene oxide solution in equal volumes, and stir at 50° C. for 2 hours to obtain a mixed solution;

[0068] (5) Perform one-step spin coati...

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Abstract

The invention belongs to the technical field of perovskite, and discloses a perovskite thin film, a preparation method and application thereof. Method: 1) adopt organic solvent to PbI 2 Dubbed into a solution to obtain PbI 2 solution; 2) cesium iodide, formamidine hydriodide and 1-naphthylmethylammonium iodide are added to PbI 2 solution, stirring to obtain a perovskite precursor solution; 3) using an organic solvent to make polyethylene oxide into a solution to obtain a polyethylene oxide solution; mixing the perovskite precursor solution with the polyethylene oxide solution , forming a film to obtain a perovskite film. The method of the invention is simple, and the prepared perovskite thin film has many alpha phases of perovskite, small grain size, high film coverage and regularity, and excellent optical characteristics in light-emitting devices. The perovskite thin film is used for light emitting devices.

Description

technical field [0001] The invention belongs to the technical field of perovskite, and in particular relates to a perovskite thin film, a preparation method thereof and an application in light-emitting devices. Background technique [0002] In recent years, perovskite has achieved good results in the field of solar cells, and the power conversion efficiency (PCE) has exceeded 22%. The perovskite material can adjust the energy gap of perovskite by adjusting the ratio of halogen, and then The emitted light of different wavelengths is obtained, and the color purity of these emitted lights is high, and the half-peak width of electroluminescence is narrow, and its research on light-emitting devices is also a hot research field. Among them, the preparation of perovskite thin films is the most critical. In the process of preparing perovskite thin films, the one-step spin coating method is widely used by researchers because of its simplicity and easy operation. [0003] In terms of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/54
CPCH10K71/12H10K85/30
Inventor 彭俊彪黄国辉谢淦澂邹建华王娟红江从彪麦超晃王坚曹镛
Owner SOUTH CHINA UNIV OF TECH
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