Crystalline silicon solar cell and preparation method thereof

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve the problems of high cost of passivation on the back of crystalline silicon solar cells, etc.

Pending Publication Date: 2019-03-19
SUZHOU TALESUN SOLAR TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a crystalline silicon solar cell and its manufacturing method, to solve the problem of high cost of passivation on the back of the crystalline silicon solar cell in the prior art

Method used

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  • Crystalline silicon solar cell and preparation method thereof
  • Crystalline silicon solar cell and preparation method thereof
  • Crystalline silicon solar cell and preparation method thereof

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specific Embodiment approach 4

[0085] The present invention also provides a method for manufacturing a crystalline silicon solar cell, and a schematic flow chart of a specific implementation thereof is as follows: Figure 5 As shown, it is referred to as the fourth specific embodiment, including:

[0086] Step S101 : providing a P-type substrate 101 .

[0087] Furthermore, the above-mentioned P-type substrate 101 is also processed by one or more of the processes of cleaning, cutting damage removal, and surface texturing.

[0088] Step S102: disposing an N-type semiconductor layer 102 on the light-receiving surface of the above-mentioned P-type substrate 101 .

[0089] Step S103 : setting a dielectric layer 104 on the backlight surface of the P-type substrate 101 , the dielectric layer 104 is a dielectric layer 104 with a high fixed positive charge.

[0090] Furthermore, the dielectric layer 104 is set to deposit a silicon nitride layer on the back side by PECVD (PlasmaEnhanced Chemical Vapor Deposition) m...

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Abstract

The present invention discloses a crystalline silicon solar cell. The crystalline silicon solar cell comprises a P-type substrate; the front surface of the P-type substrate includes an N-type semiconductor layer and a front electrode in order from inside to outside, and the back surface of the P-type substrate includes a dielectric layer and a back electrode in order from inside to outside; the dielectric layer is a dielectric layer with a high fixed positive charge; the dielectric layer induces and forms an N-type inversion layer on the contact surface of the P-type substrate and the dielectric layer; the dielectric layer has patterns matching with the back electrode to allow the back electrode to be direct contact with the P-type substrate. Floating junctions are formed near the surfaceof the back surface of the P-type substrate to inhibit the surface recombination of the back surface and increase the photoelectric conversion efficiency of the crystalline silicon solar cell; the dielectric layer can be arranged through adoption of a simple technology of deposition, is low in cost and simple in process compared to the aluminum oxide in the prior art. The present invention furtherprovides a preparation method of the crystalline silicon solar cell having the above-mentioned advantageous effects.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a crystalline silicon solar cell and a manufacturing method thereof. Background technique [0002] Solar energy, as a renewable energy source, has been valued by the whole world since the early days of its invention. After entering the 21st century, more and more solar cell power generation technologies have been developed. Among them, PERC cells in crystalline silicon cells are due to their conversion efficiency High, and can be put into industrial production, so PERC (Passivated Emitter and Rear Cell) crystalline silicon solar cells with dielectric layer for rear passivation have received extensive attention from the photovoltaic industry, and the production capacity has increased rapidly, from 5GW at the end of 2015 to 35GW at the end of 2017. The proportion of the total production capacity of crystalline silicon cells is also increasing. [0003] However, the back passivation of e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0216H01L31/0352H01L31/18
CPCH01L31/02167H01L31/02245H01L31/0352H01L31/035272H01L31/1876Y02E10/50Y02P70/50
Inventor 张树德魏青竹倪志春钱洪强连维飞胡党平王泽辉
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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