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A kind of perovskite thin film solar cell and preparation method thereof

A solar cell and perovskite technology, applied in the field of solar cells, can solve problems such as complex structures and processes, different structures, and high equipment costs, and achieve good film density, improved repeatability, and low deposition temperature.

Active Publication Date: 2021-06-15
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the reported GaN-based perovskite battery is different from the above-mentioned perovskite battery structure, that is, GaN is not deposited on the transparent electrode (FTO conductive glass is the most commonly used), but metal-organic chemical vapor deposition (Metal-organic chemical) is used. Technology such as vapor deposition (MOCVD) or molecular beam epitaxy (Molecular beamepitaxy, MBE) deposits GaN on the surface of single crystal silicon (Si) at high temperature (usually higher than 800 °C), and GaN / Si-based perovskite cells exist The disadvantages of complex structure and process and high equipment cost

Method used

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  • A kind of perovskite thin film solar cell and preparation method thereof
  • A kind of perovskite thin film solar cell and preparation method thereof
  • A kind of perovskite thin film solar cell and preparation method thereof

Examples

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Effect test

Embodiment 1

[0066] First, put the FTO conductive glass into the reaction chamber of the PEALD system and evacuate it to ~0.15 Torr, then raise the temperature to 240°C and keep it for 30 minutes to stabilize the temperature. GaN was deposited using high-purity N 2 、H 2 and Ar(N 2 :H 2 :Ar=3:6:1) mixed plasma and triethylgallium as precursor, high-purity Ar as purge gas. The deposition of GaN needs to be completed in sequence: the plasma is injected for 30s and then purged for 30s, followed by TEG for 0.5s and reacted for 45s and then purged for 30s. The preparation of atomic layer deposition GaN thin film electron transport layer requires 80 cycles (cycles), and the thickness is about 8nm. Next, MAPbI was prepared by one-step spin-coating on the surface of atomic layer deposition GaN thin film electron transport layer. 3 Perovskite light-absorbing layer, first configure MAPbI 3 Reaction precursor solution: Weigh 0.578g PbI and 0.2g MAI respectively, add to 1mL DMF, stir at room temp...

Embodiment 2

[0071]First, put the FTO conductive glass into the reaction chamber of the PEALD system and evacuate it to ~0.15 Torr, then raise the temperature to 280°C and keep it for 30min to stabilize the temperature. GaN was deposited using high-purity N 2 、H 2 and Ar(N 2 :H 2 :Ar=3:6:1) mixed plasma and triethylgallium as precursor, high-purity Ar as purge gas. The deposition of GaN needs to be completed in sequence: the plasma is injected for 30s and then purged for 30s, followed by TEG for 0.5s and reacted for 45s and then purged for 30s. The preparation of atomic layer deposition GaN thin film electron transport layer requires 50 cycles, and the thickness is about 5nm. Next, MAPbI was prepared by one-step spin-coating on the surface of atomic layer deposition GaN thin film electron transport layer. 3 Perovskite light-absorbing layer, first configure MAPbI 3 Reaction precursor solution: Weigh 0.578g PbI and 0.2g MAI respectively, add to 1mL DMF, stir at room temperature for 1h ...

Embodiment 3

[0076] First, put the FTO conductive glass into the reaction chamber of the PEALD system and evacuate it to ~0.15 Torr, then raise the temperature to 280°C and keep it for 30min to stabilize the temperature. GaN was deposited using high-purity N 2 、H 2 and Ar(N 2 :H 2 :Ar=3:6:1) mixed plasma and triethylgallium as precursor, high-purity Ar as purge gas. The deposition of GaN needs to be completed in order: the plasma is injected for 30s and then purged for 30s, followed by TMG for 0.5s and reacted for 45s and then purged for 30s. The preparation of atomic layer deposition GaN thin film electron transport layer requires 30 cycles, and the thickness is about 3nm. Next, MAPbI was prepared by one-step spin-coating on the surface of atomic layer deposition GaN thin film electron transport layer. 3 Perovskite light-absorbing layer, first configure MAPbI 3 Reaction precursor solution: Weigh 0.578g PbI and 0.2g MAI respectively, add to 1mL DMF, stir at room temperature for 1h to...

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Abstract

The invention belongs to the technical field of solar cells, in particular to a perovskite thin film solar cell using ALD deposited GaN as an electron transport layer and a preparation method thereof; the perovskite thin film solar cell comprises a transparent conductive substrate, an electron transport layer , perovskite light absorbing layer, hole transport layer and metal counter electrode. The application of the present invention adopts atomic layer deposition (ALD) technology to deposit gallium nitride film on a transparent conductive substrate to replace the currently commonly used metal oxide as the electron transport layer. GaN thin films have energy band positions matched with perovskite light-absorbing layers and high electron mobility; at the same time, the lower deposition temperature of GaN thin films is expected to promote the development of flexible perovskite thin-film solar cells.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a perovskite thin-film solar cell using ALD deposited GaN as an electron transport layer and a preparation method thereof. Background technique [0002] Organometallic halide light-absorbing materials with a perovskite structure have been used to prepare thin-film solar cells in recent years due to their excellent photoelectric properties and easy preparation, and the photoelectric conversion efficiency of the cells has reached 23% in just a few years. The above shows a very large application development prospect. Perovskite thin film solar cells are usually composed of a transparent electrode, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer and a metal counter electrode. According to whether the electron transport layer contains a mesoporous structure, the perovskite cell is divided into mesopores. Porous perovskite cells and planar p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549
Inventor 仇鹏郑新和卫会云彭铭曾刘三姐何荧峰李美玲宋祎萌安运来
Owner UNIV OF SCI & TECH BEIJING
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