Supercharge Your Innovation With Domain-Expert AI Agents!

Current sensing device and associated method

A current sensing and current technology, applied in electronic switches, only measuring current, circuits, etc., can solve problems such as inability to accurately sense current amplitude and change

Active Publication Date: 2022-03-08
MAXIM INTEGRATED PROD INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these current sensing devices do not dissipate significant power, they often cannot sense current magnitude accurately due to variations in parasitic resistance
For example, the parasitic resistance of an inductor can vary significantly between inductor samples, and the parasitic resistance can also vary significantly with inductor temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Current sensing device and associated method
  • Current sensing device and associated method
  • Current sensing device and associated method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] Applicants have determined that due to the mismatch between the power transistor and the sense transistor, conventional non-dissipative current sensing devices such as figure 1 current sensing devices) may degrade over time. Specifically, power transistors are subject to significant stress during operation, such as due to hot carrier injection (HCI) effects and transient voltage spikes, which may momentarily drive the power transistor to breakdown (BV). This stress causes the electrical characteristics of the power transistor, such as the transistor's on-resistance, to change over time. For example, device-level HCI characterization has shown that transistor triode current, which affects transistor on-resistance, can shift by 10% to 20% over transistor lifetime due to HCI effects. Additionally, simulations show that transistor triode currents may initially shift by about 20% in response to high current switching, followed by a slower shift similar to that caused by the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A current sensing device includes: a reference transistor electrically coupled to a power transistor; a sense transistor electrically coupled to the power transistor; and control circuitry. The control circuitry is configured to (a) control the current through the sense transistor such that the voltage at the sense transistor has a predetermined relationship with the voltage at the power transistor, and (b) according to the reference One or more operating conditions at the transistor control the current through the sense transistor in order to compensate for aging of the power transistor.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority to U.S. Provisional Patent Application Serial No. 62 / 632,786, filed February 20, 2018, which is incorporated herein by reference. Background technique [0003] Current sensing devices sense the magnitude of current in an electrical circuit. Current sensing devices are used in a variety of applications. For example, current sensing devices are commonly used to determine current magnitude in power management applications, such as for overcurrent protection, current mode control, power monitoring, and / or load-dependent voltage positioning. [0004] Many current sensing devices include a discrete current sensing resistor, where current passing through the resistor generates a voltage proportional to the magnitude of the current passing through the resistor. The voltage across the resistor is measured to determine the magnitude of the current through the resistor. Although th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08H03K17/56
CPCH02M1/08H03K17/56H02M1/0009H03K2217/0027H03K17/0822H03K17/122G01R19/0092H02M3/156H03K17/687
Inventor M·A·祖尼加M·D·麦克吉姆赛B·A·三和江启得I·耶尔格维奇U·H·马德
Owner MAXIM INTEGRATED PROD INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com