Three-dimensional memory device with bent backside word lines

Abstract

Embodiments of three-dimensional (3D) memory devices with bent backside word lines are disclosed herein. In an example, a 3D memory device includes: a substrate; a semiconductor layer above the substrate and extending laterally beyond at least one edge of the substrate; a plurality of interleaved conductive and dielectric layers extending below the backside of the backside; and a plurality of memory strings, each memory string extending vertically through the interleaved conductive and dielectric layers and in contact with the semiconductor layer .

Description

technical field [0001] Embodiments of the present disclosure relate to three-dimensional (3D) memory devices and methods of manufacturing the same. Background technique [0002] Planar memory cells are scaled to smaller sizes through improvements in process technology, circuit design, programming algorithms, and fabrication processes. However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly. As a result, the storage density of planar memory cells approaches an upper limit. [0003] 3D memory architectures can address density limitations in planar memory cells. A 3D memory architecture includes a memory array and peripherals for controlling signals to and from the memory array. Contents of the invention [0004] Embodiments of 3D memory devices with bent backside wordlines are disclosed herein. [0005] In one example, a 3D memory device includes: a substrate; a semiconductor layer...

AI Technical Summary

Problems solved by technology

However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly

As a result, the storage density of planar memory cells approaches the upper limit

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