A memory programming method and programming system

A programming method and technology of a programming system, applied in static memory, read-only memory, information storage, etc., can solve problems such as programming interference, and achieve the goal of reducing programming time, reducing programming interference, reducing programming effect or programming interference Effect

Active Publication Date: 2022-04-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the present invention provides a programming method and a programming system for a memory, to solve the problem of severe program interference on adjacent unselected word lines when programming a selected word line

Method used

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  • A memory programming method and programming system
  • A memory programming method and programming system
  • A memory programming method and programming system

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Embodiment Construction

[0036] Just as in the background technology, since the programming voltage V of the selected memory cell is the memory cell to be programmed PGM higher, when the adjacent unselected word line passes the voltage V PASS When low, a selected word line has a voltage difference between it and its adjacent unselected word line, which creates interference through parasitic capacitance between adjacent word lines, i.e. memory cells connected to the unselected word line The threshold voltage of the 1 will be coupled to a higher voltage through parasitic capacitance, thereby disturbing the storage state of the memory cells connected to the unselected word lines.

[0037] Based on this, the present invention provides a memory programming method and programming system to overcome the above-mentioned problems in the prior art, including:

[0038] receiving the programming data, and obtaining the selected memory cell and its target storage state according to the programming data, the targe...

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Abstract

The programming method and programming system of the memory provided by the present invention include: obtaining the selected storage unit and its target storage state, i.e. the i-th state, according to the programming data; The pass voltage on the word line adjacent to the word line of the unit is increased by a preset value; it is judged whether the threshold voltage of the selected memory cell is less than a preset intermediate verification voltage, and the preset intermediate verification voltage is less than the verification voltage of the i-th state and greater than the i-th verification voltage ‑1 state verification voltage; if yes, make the programming pulse step equal to the first step, and program the selected memory cell; if not, make the programming pulse step equal to the second step, and program the selected memory cell The unit is programmed with a second step size smaller than the first step size. Since the pass voltage on the adjacent word lines is increased when programming is started in the present invention, the programming interference of the word line of the selected memory cell to the adjacent word lines can be reduced.

Description

technical field [0001] The present invention relates to the technical field of memory, and more specifically, to a memory programming method and a programming system. Background technique [0002] Reading, programming, and erasing are the basic operations of NAND flash memory. The Incremental Step Pulse Programming (ISPP) method is currently a commonly used programming method: it injects charge into the gate of the memory cell by applying a programming pulse to apply a target threshold voltage corresponding to the data to be stored to the gate of the memory cell and source. [0003] Wherein, the entire programming process includes a plurality of programming pulses, and a verification operation (that is, a read operation) must be performed after each programming operation. If the threshold voltage V of the memory cell TH ≥ Verification voltage V FY , the verification is passed, indicating that the target threshold voltage is reached, and the programming operation ends; if ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/12G11C16/08G11C16/34
CPCG11C16/12G11C16/3431G11C16/08
Inventor 宋璧若刘飞霍宗亮
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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