Substrate table for growing single crystal diamonds by using microwave plasma technology and growing method

A technology of microwave plasma and microwave plasma, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of discharge, influence of microwave electric field distribution, and installation of intake pipes, etc., and achieve simple process operation, remarkable effect, high quality effects

Pending Publication Date: 2020-08-11
SHANGHAI ZHENGSHI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the uniqueness of microwaves, it is not possible to arrange the intake pipes inside the vacuum chamber at will.
Because the pipe is generally made of metal, it is easy to cause discharge in the microwave electric field, and the metal will affect the distribution of the microwave electric field

Method used

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  • Substrate table for growing single crystal diamonds by using microwave plasma technology and growing method
  • Substrate table for growing single crystal diamonds by using microwave plasma technology and growing method
  • Substrate table for growing single crystal diamonds by using microwave plasma technology and growing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024]The diameter of the substrate table (5) is 60 mm; there is a pit in the center of the substrate table, the diameter of the pit is 20 mm, and the depth is 8.0 mm; the metal molybdenum thin tube (4) with an outer diameter of 2.0 mm and an inner diameter of 1.0 mm is close to the bottom of the pit. mm, four air outlet holes are arranged symmetrically around the crystal holder, the diameter of the air outlet holes is 0.5 mm, and the air outlet direction faces the side wall of the pit. Close to the top of the pit is a metal molybdenum thin tube (8) with an outer diameter of 2.0 mm and an inner diameter of 1.0 mm. Four air outlets are arranged symmetrically with the crystal support as the center. The diameter of the air outlet is 0.5 mm, and the air extraction direction faces the pit side wall. The crystal holder (3) is high-purity metal tungsten with a diameter of 12 mm and a thickness of 7.5 mm. The diamond seed crystal (2) is a square diamond single wafer with geometric dim...

Embodiment 2

[0028] The diameter of the substrate table (5) is 60 mm; there is a pit in the center of the substrate table, the diameter of the pit is 20 mm, and the depth is 8.0 mm; the metal molybdenum thin tube (4) with an outer diameter of 2.0 mm and an inner diameter of 1.0 mm is close to the bottom of the pit. mm, four air outlet holes are arranged symmetrically around the crystal holder, the diameter of the air outlet holes is 0.5 mm, and the air outlet direction faces the side wall of the pit. Close to the top of the pit is a metal molybdenum thin tube (8) with an outer diameter of 2.0 mm and an inner diameter of 1.0 mm. Four air outlets are arranged symmetrically with the crystal support as the center. The diameter of the air outlet is 0.5 mm, and the air extraction direction faces the pit side wall. The crystal holder (3) is high-purity metal tungsten with a diameter of 12 mm and a thickness of 7.5 mm. The diamond seed crystal (2) is a square diamond single wafer with geometric di...

Embodiment 3

[0032] The diameter of the substrate table (5) is 60 mm; there is a pit in the center of the substrate table, the diameter of the pit is 20 mm, and the depth is 8.0 mm; the metal molybdenum thin tube (4) with an outer diameter of 2.0 mm and an inner diameter of 1.0 mm is close to the bottom of the pit. mm, four air outlet holes are arranged symmetrically around the crystal holder, the diameter of the air outlet holes is 0.5 mm, and the air outlet direction faces the side wall of the pit. Close to the top of the pit is a metal molybdenum thin tube (8) with an outer diameter of 2.0 mm and an inner diameter of 1.0 mm. Four air outlets are arranged symmetrically with the crystal support as the center. The diameter of the air outlet is 0.5 mm, and the air extraction direction faces the pit side wall. The crystal holder (3) is high-purity metal tungsten with a diameter of 12 mm and a thickness of 7.5 mm. The diamond seed crystal (2) is a square diamond single wafer with geometric di...

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Abstract

The invention provides a substrate table for growing single crystal diamonds by using a microwave plasma technology. The substrate table comprises a circular microwave plasma substrate table. Spherical plasma excited by microwaves is attached to the surface of the substrate table and located on the substrate table, a pit is formed in the axial symmetry center of the surface of the substrate table,and a crystal support used for diamond growth can be placed in the pit. An annular metal thin pipe is arranged at the bottom of the pit around the crystal support, small holes are formed in the thinpipe, the thin pipe is connected with a gas supply system, and the gas flow in the thin pipe is controlled through a gas flow meter. The annular metal thin pipe is arranged at the top of the pit around the crystal support, small holes are formed in the thin pipe, the thin pipe is connected with an air exhaust system, and the gas flow in the thin pipe is controlled through a gas flow meter. According to the scheme, normal growth of diamonds on the upper surface of the seed crystal can be prevented from being affected by non-diamond carbon accumulated on the side face of the seed crystal, and the seed crystal surface growth speed can be increased.

Description

technical field [0001] The invention belongs to the technical field of vacuum microelectronics, and in particular relates to a device for preparing single crystal diamonds and a method for improving the growth quality of growing single crystal diamonds by using the device. Background technique [0002] Diamond is a high-quality single crystal diamond, which is widely used in many fields due to its superior performance. Natural diamonds are rare and expensive; artificial diamonds prepared by high temperature and high pressure method (HTHP method) also affect the properties of diamonds due to the presence of metal catalysts; microwave plasma chemical vapor deposition (MPCVD) technology, in specific seed crystals High-quality single crystal diamonds can be grown on the surface, which is an ideal technology for the growth of artificial diamonds. [0003] A microwave plasma chemical vapor deposition device generally includes a microwave system, a vacuum system, a gas supply syst...

Claims

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Application Information

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IPC IPC(8): C30B29/04C30B25/12
CPCC30B29/04C30B25/12
Inventor满卫东龚闯朱长征吴剑波
OwnerSHANGHAI ZHENGSHI TECH CO LTD