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Capacitor and preparation method and application thereof

A technology for capacitors and upper electrodes of capacitors, applied in capacitors, circuits, electrical components, etc., can solve problems such as membrane damage and current leakage, and achieve the effects of avoiding damage, reducing current leakage, and improving capacitance and device operating speed

Active Publication Date: 2020-11-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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Problems solved by technology

However, the deposition temperature of SiGe is 400-430°C, and it has a relatively high concentration of doping and a high content of Ge, which leads to the formation of polycrystals with a large grain size and columnar structure during the growth process, and its crystal stress will affect the underlying film. (e.g. dielectric membranes) generate significant mechanical stress, causing membrane damage, resulting in severe current leakage

Method used

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  • Capacitor and preparation method and application thereof
  • Capacitor and preparation method and application thereof

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Embodiment

[0024] Taking the capacitor of DRAM as an example, its structure is as follows figure 1 As shown: from bottom to top, it includes the semiconductor substrate, the lower electrode, the stress buffer layer, the dielectric layer and the upper electrode. Among them, the materials that can be used for the bottom electrode include but are not limited to: titanium nitride (TiN), ruthenium (Ru), platinum (Pt), tungsten nitride (WN), iridium (Ir), ruthenium oxide (RuO 2 ), strontium ruthenium oxide (SrRuO), etc. The dielectric layer can be one or more layers, and the same or different materials can be used for multiple layers. The dielectric material is preferably a material with a high dielectric constant and stable electrical properties, including but not limited to: TiO 2 , zirconium oxide (typically ZrO, ZrO 2 etc.), aluminum oxides (typically AlO, Al 2 o 3 ), HfO 2 , lanthanide metal oxides and rare earth metal oxides, Y 2 o 3 , tantalum titanium oxide, etc. or a mixture of...

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Abstract

The invention relates to a capacitor and a preparation method and application thereof. The method for depositing the SiGe film in the capacitor comprises the following steps of: supplying silane gas to a semiconductor substrate, supplying precursor gas required by the SiGe film, and depositing. Damage of SiGe crystal stress to the lower layer film can be avoided, current leakage is reduced, and capacitance and device operation speed are improved.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to capacitors and their preparation methods and applications. Background technique [0002] Capacitor is one of the important structures of most semiconductor devices (such as DRAM, Flash, Logic, etc.). In the traditional manufacturing of capacitors, doped polysilicon (Poly-Si) is mainly used as the electrode material, and the electrode film is formed by the low-pressure chemical vapor deposition (LPCVD) method, but usually an annealing process is required, and a large current is easily induced during annealing Leakage problem. [0003] For this reason, the prior art introduces SiGe as an electrode material, which can be doped or non-doped. However, the deposition temperature of SiGe is 400-430°C, and it has a relatively high concentration of doping and a high content of Ge, which leads to the formation of polycrystals with a large grain size and columnar structure during ...

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Application Information

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IPC IPC(8): H01L23/64H01L49/02
CPCH01L28/56H01L23/642
Inventor 安重镒李相遇金成基熊文娟蒋浩杰李亭亭罗英
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI