Manufacturing method of power semiconductor device and power semiconductor device

Abstract

The invention provides a power semiconductor device and a manufacturing method thereof, and solves the problems of low reverse recovery turn-off capability and low through-current capability of an existing reverse blocking IGCT due to large blocking capability electric leakage. The method comprises: carrying out ion implantation on a substrate of a second conductive type to form a first conductivetype first base region on the upper surface and form a first conductive type anode emitter region on the back surface; performing high-temperature propulsion to form a first conductive type second base region on the upper surface, far away from the substrate, of the first conductive type first base region, and form a first conductive type third base region on the lower surface, far away from thesubstrate, of the first conductive type anode emission region; forming a second conductive type cathode region on the upper surface of the first conductive type first base region; forming an anode onthe first conductivity type anode emitter region; forming a cathode on the second conductive type cathode region, and forming a gate on the first conductive type first base region; processing the edgeof the substrate to form a mesa; and locally irradiating the table-board terminal to form an irradiation area.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a power semiconductor device and the power semiconductor device. Background technique [0002] At present, the flexible DC transmission system in the world has a high voltage level and a large power capacity. The main shut-off devices used in some key devices must have a high single-transistor shutdown power capacity, long-term short-circuit failure mode, reverse blocking capability, and easy series connection. heat dissipation and other working characteristics. IGCT has the advantages of high blocking voltage, large power capacity, low on-state loss, short-circuit failure mode, and easy series-parallel connection; on the other hand, as a bipolar device, IGCT device has the characteristics of high robustness, therefore, RB-IGCT (Reverse Bolcking Gate Commutated Thyristors) devices are very suitable for the application of ultra-high power power e...

AI Technical Summary

Problems solved by technology

[0003] In view of this, an embodiment of the present invention provides a method for manufacturing a power semiconductor device and a power semiconductor device, which solve the problems of the existing reverse resistance IGCT due to large blocking leakage, low reverse recovery turn-off capability and high current flow capability. And other issues

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