A kind of high-efficiency crystalline silicon solar cell and preparation method thereof
A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve the problems of high hydrogen content and attenuation of solar cells, and achieve the effect of suppressing re-escape and avoiding performance attenuation
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Embodiment 1
[0031] A preparation method of a high-efficiency crystalline silicon solar cell, the preparation method comprises the following steps:
[0032] (1) Pre-treatment of silicon wafers: Put the clean silicon wafers in a carbonitriding furnace, and after vacuuming, introduce a mixed gas of methane and ammonia gas, the temperature is 900 ° C, the time is 180 minutes, and the flow rate of methane is 0.9 m 3 / h, the flow rate of ammonia gas is 0.6m 3 / h, the carbon potential is 1.0%;
[0033] (2) Texturing: After the silicon wafer is cooled, the surface of the silicon wafer is texturized with a texturing liquid at 12°C. The texturing liquid includes the following raw materials by weight:
[0034] 3% sodium hydroxide, 0.2% sodium dodecylbenzenesulfonate, 8% isopropanol, and the balance is water;
[0035] (3) Diffusion: use a diffusion furnace to carry out high-temperature phosphorus diffusion on the silicon wafer to form a P-N junction on the surface of the silicon wafer, adopt the ph...
Embodiment 2
[0041] A preparation method of a high-efficiency crystalline silicon solar cell, the preparation method comprises the following steps:
[0042] (1) Pre-treatment of silicon wafers: place the clean silicon wafers in a carbonitriding furnace, and after vacuuming, introduce a mixed gas of methane and ammonia gas, the temperature is 1100 °C, the time is 150 min, and the flow rate of methane is 1.0 m 3 / h, the flow rate of ammonia gas is 0.75m 3 / h, the carbon potential is 1.2%;
[0043] (2) Texturing: After the silicon wafer is cooled, the surface of the silicon wafer is texturized with a texturing liquid at 10°C. The texturing liquid includes the following raw materials by weight:
[0044] 3% sodium hydroxide, 0.2% sodium dodecylbenzenesulfonate, 8% isopropanol, and the balance is water;
[0045] (3) Diffusion: use a diffusion furnace to carry out high-temperature phosphorus diffusion on the silicon wafer to form a P-N junction on the surface of the silicon wafer, adopt the pho...
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