Gallium nitride device aging oven
A device aging and gallium nitride technology, which is applied in the semiconductor field, can solve problems that are not conducive to controlling the temperature of gallium nitride devices, and achieve the effect that is conducive to adjustment and control
Active Publication Date: 2021-06-15
浙江杭可仪器有限公司
View PDF12 Cites 3 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] However, there are very few devices for testing the high-temperature performance of GaN devices, and even if there are devices in the test, it is not conducive to controlling the temperature of GaN devices.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0029] In order to understand the specific technical solutions, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0030] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "transverse", "longitudinal", "horizontal", "inner", "outer" etc. indicate The orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship that is usually placed when the product of the invention is used, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the It should not be construed as limiting the invention that a device or element must have a particular orientation, be constructed, and operate in a particular ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a gallium nitride device aging oven. The gallium nitride device aging oven comprises a cooling module, and a control module and a heating module which are arranged on the cooling module, wherein the heating module comprises a heating aluminum plate and a mounting aluminum plate used for mounting a gallium nitride device, and the mounting aluminum plate is arranged on the heating aluminum plate; the heating aluminum plate comprises heating rods arranged on the two sides of the mounting aluminum plate; the cooling module comprises a heat dissipation cylinder and an air duct communicated with the heat dissipation cylinder, a first fan is arranged at one end of the heat dissipation cylinder, and the heating aluminum plate is fixed to an upper end of the heat dissipation cylinder; the control module comprises a PID temperature control board, a control board for controlling the PID temperature control board and a test board for outputting test signals, the PID temperature control board is electrically connected with a heating rod, and a first fan, the PID temperature control board and the test board are electrically connected with the control board. The gallium nitride device aging oven is advantaged in that the gallium nitride device can be subjected to high-temperature testing, and the temperature of the gallium nitride device can be easily controlled in the testing process.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an aging box for gallium nitride devices. Background technique [0002] Gallium nitride (GaN) is a semiconductor with a large band gap. It is a new type of semiconductor material for the development of microelectronic devices and optoelectronic devices. It has a wide direct band gap, strong atomic bonds, high thermal conductivity, chemical Good stability and other advantages, and become an excellent material for microwave power transistors, and can be made into microwave devices or chargers. [0003] However, there are very few devices for testing the high-temperature performance of GaN devices, and even if there are devices in the test, it is not conducive to controlling the temperature of GaN devices. Contents of the invention [0004] In order to overcome the deficiencies of the prior art, the object of the present invention is to provide an aging chamber for GaN dev...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R31/00
CPCG01R31/003G01R31/2601
Inventor 曹佶赵宝忠林向前
Owner 浙江杭可仪器有限公司