A gallium nitride device aging box
A device aging and gallium nitride technology, which is applied in the semiconductor field, can solve problems that are not conducive to controlling the temperature of gallium nitride devices, and achieve the effect that is conducive to adjustment and control
Active Publication Date: 2021-08-17
浙江杭可仪器有限公司
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Problems solved by technology
[0003] However, there are very few devices for testing the high-temperature performance of GaN devices, and even if there are devices in the test, it is not conducive to controlling the temperature of GaN devices.
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[0029] In order to understand the specific technical solutions, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0030] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "transverse", "longitudinal", "horizontal", "inner", "outer" etc. indicate The orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship that is usually placed when the product of the invention is used, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the It should not be construed as limiting the invention that a device or element must have a particular orientation, be constructed, and operate in a particular ...
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The invention discloses an aging box for gallium nitride devices, which includes a cooling module, a control module and a heating module arranged on the cooling module, the heating module includes a heating aluminum plate and an aluminum plate for installing gallium nitride devices, The installation aluminum plate is arranged on the heating aluminum plate, and the heating aluminum plate includes heating rods arranged on both sides of the installation aluminum plate; the cooling module includes a cooling tube and an air duct communicating with the cooling tube, and the cooling One end of the cylinder is provided with a first fan, and the heating aluminum plate is fixed on the upper end of the heat dissipation cylinder; the control module includes a PID temperature control board, a control board for controlling the PID temperature control board and a test board for outputting test signals, The PID temperature control board is electrically connected to the heating rod, and the first fan, the PID temperature control board and the test board are all electrically connected to the control board. It can perform high-temperature testing on GaN devices, and it is also easy to control the temperature of GaN devices during testing.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an aging box for gallium nitride devices. Background technique [0002] Gallium nitride (GaN) is a semiconductor with a large band gap. It is a new type of semiconductor material for the development of microelectronic devices and optoelectronic devices. It has a wide direct band gap, strong atomic bonds, high thermal conductivity, chemical Good stability and other advantages, and become an excellent material for microwave power transistors, and can be made into microwave devices or chargers. [0003] However, there are very few devices for testing the high-temperature performance of GaN devices, and even if there are devices in the test, it is not conducive to controlling the temperature of GaN devices. Contents of the invention [0004] In order to overcome the deficiencies of the prior art, the object of the present invention is to provide an aging chamber for GaN dev...
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IPC IPC(8): G01R31/26G01R31/00
CPCG01R31/003G01R31/2601
Inventor 曹佶赵宝忠林向前
Owner 浙江杭可仪器有限公司