Forming method of critical dimension on-line monitoring structure
A technology of critical size and monitoring area, applied in electrical components, circuits, semiconductor/solid-state device testing/measurement, etc., can solve problems such as prone to overturning, and achieve the effect of improving stability
Pending Publication Date: 2021-10-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0004] However, as the critical dimension becomes smaller and smaller, for a fixed photoresist thickness, the aspect ratio of the pattern increases. Due to the increase in the step difference between the gate and the substrate surface, the traditional critical dimension online monitoring structure after the gate is formed The injection level is prone to peeling
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[0031] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0032] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...
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The invention discloses a forming method of a critical dimension on-line monitoring structure, and relates to the field of semiconductor manufacturing. The forming method of the critical dimension on-line monitoring structure comprises the steps: performing photoetching and etching on a preset film layer, and forming a preset pattern and a liner pattern, wherein the liner pattern is located in a critical dimension on-line monitoring area; forming a critical dimension on-line monitoring structure and a predetermined photoetching pattern through a photoetching process, wherein the critical dimension on-line monitoring structure is located on the surface of the liner pattern; therefore, the problem that an injection layer of an existing critical size online monitoring structure is prone to overturning after a thick film layer structure is formed is solved; the effects that the phenomenon that the critical dimension online monitoring structure overturns at the injection level is improved, and the stability of the critical dimension online monitoring structure is improved are achieved.
Description
technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a method for forming a critical dimension online monitoring structure. Background technique [0002] With the development of integrated circuit technology, the critical dimension (CD) becomes smaller and smaller. In the manufacturing process of the device, in order to monitor the critical dimension, an online critical dimension monitoring structure will be formed. [0003] The traditional critical dimension online monitoring structure is distributed in the dicing groove of the wafer, and only the plane design of the critical dimension online monitoring structure is considered. Taking the process including forming the gate as an example, the gate is usually composed of polysilicon and has a certain thickness. When depositing the gate film layer (polysilicon), the gate film layer covers the scribe groove at the same time, but the gate film layer is During etch...
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IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP