Double-layer switch array based on silicon-based optical waveguide

A silicon-based optical waveguide and electro-optical switch array technology, which is applied in the direction of optical waveguides and light guides, can solve the problems of large size of single-layer device arrangement and unfavorable large-scale monolithic integration.

Pending Publication Date: 2022-04-08
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the improvement of signal transmission requirements for device integration, the arrangement of single-layer devices requires a larger size, which is not conducive to the realization of large-scale monolithic integration.

Method used

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  • Double-layer switch array based on silicon-based optical waveguide
  • Double-layer switch array based on silicon-based optical waveguide
  • Double-layer switch array based on silicon-based optical waveguide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] for Figure 4 As shown in the switch array, set the voltage of one modulation arm to 0V, and when the modulation voltage of the other modulation arm is less than 0.72V, it is in the initial "CROSS" state. At this time, I 1 input from O 2 output, I 2 input from O 1 Output, the optical loss is 1.18dB, and the crosstalk is -33.56dB; set the voltage of one modulation arm to 0V, and the other modulation arm is in the "BAR" state when the modulation voltage is 0.95V. At this time, I 1 input from O 1 output, I 2 input from O 2 Output, the loss is 1.18dB, and the crosstalk is -19.18dB.

Embodiment 2

[0032] for Figure 10 As shown in the switch array, when the input / output correspondence of the switch array is "I 2 —O 4 ”, according to the routing algorithm, one of the possible switch paths that can realize the optical signal transmission is: TS11 (straight-through state), TS23 (straight-through state), BS33 (straight-through state), BS43 (crossover state), BS52 (straight-through state) .The optical signal first comes from the input fiber and passes through the port I 2 Coupled into the device layer 1, coupled to the device layer 1 through the interlayer coupler C1, after passing through the switches TS11 and TS23 in the through state, coupled to the device layer 2 through the interlayer coupler C13, and then entering the switch BS33 after passing through the 180° waveguide (straight-through state), after passing through BS43 (crossover state) and BS52 (straight-through state), it is coupled to the O of device layer 1 through the interlayer coupler C6 4 port output.

Embodiment 3

[0034] for Figure 10 As shown in the switch array, when all the switch states are in the straight-through state, the corresponding input and output paths are: I 1 -TS11-TS21-C9-BS31-BS41-BS51-O 1 , I 2 -C1-TS11-TS23-C13-BS33-BS43-BS51-C5-O 2 , I 3 -TS12-TS21-C10-BS32-BS41-BS52-O 3 , I 4 -C2-TS12-TS23-C14-BS34-BS43-BS52-C6-O 4 , I 5 -TS13-TS22-C11-BS31-BS42-BS53-O 5 , I 6 -C3-TS13-TS24-C15-BS33-BS44-BS53-C7-O 6 , I 7 -TS14-TS22-C12-BS32-BS42-BS54-O 7 , I 8 -C4-TS14-TS24-C16-BS34-BS44-BS54-C8-O 8 .

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Abstract

The invention discloses a double-layer switch array based on a silicon-based optical waveguide, and belongs to the technical field of integrated optoelectronics. The device is integrated on a double-layer silicon structure wafer and is composed of an electro-optical switch array, an interlayer coupler and an optical waveguide, and the electro-optical switch array is composed of a first-stage electro-optical switch array (TS11-TS14), a second-stage electro-optical switch array (TS21-TS24), a third-stage electro-optical switch array (BS31-BS34), a fourth-stage electro-optical switch array (BS41-BS44) and a fifth-stage electro-optical switch array (BS51-BS54). Four electro-optical switch units are arranged in each stage of electro-optical switch array; the electro-optical switch unit adopts a Mach-Zehnder interferometer structure and consists of two dual-port 3-dB optical splitters and two phase shift arms, and each 3-dB optical splitter adopts a multi-mode interference device structure and adopts double-arm push-pull electro-optical modulation. The area of a single-layer device can be obviously reduced, and the integration level is improved.

Description

technical field [0001] The invention belongs to the technical field of integrated optoelectronics, and specifically relates to a double-layer switch array based on a silicon-based optical waveguide. The double-layer switch array has very important applications and good development prospects in the direction of realizing multi-layer chip interconnection and signal transmission. , which plays an important role in multi-dimensional optical communication and optical switching. Background technique [0002] In recent years, the Internet communication data capacity has grown rapidly at a rate of 50-60% per year, and people's demand for bandwidth is also increasing. The transmission and processing of massive data information is facing higher and higher requirements. This also makes the bottleneck of electrical switching more and more prominent, that is, the communication bandwidth and interconnection density are close to the limit, the power consumption of network nodes and electri...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): G02B6/12
Inventor孙小强李鹏飞范晓健刘庭瑜刘崧岳张大明
OwnerJILIN UNIV