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Semiconductor memory device and method for manufacturing semiconductor memory device

A storage device and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., and can solve the problems of reduced operational reliability of three-dimensional semiconductor storage devices

Pending Publication Date: 2022-05-13
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the number of stacked memory cells increases, the operational reliability of three-dimensional semiconductor memory devices may decrease

Method used

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  • Semiconductor memory device and method for manufacturing semiconductor memory device
  • Semiconductor memory device and method for manufacturing semiconductor memory device
  • Semiconductor memory device and method for manufacturing semiconductor memory device

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Embodiment Construction

[0018] The specific structural and functional descriptions disclosed herein are merely illustrated to describe embodiments according to the concepts of the present disclosure. Embodiments according to the concepts of the present disclosure may be embodied in various forms and should not be construed as limited to the specific embodiments set forth herein.

[0019] It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another.

[0020] Various embodiments of the present disclosure relate to a semiconductor memory device capable of improving operational reliability and a method of manufacturing the semiconductor memory device.

[0021] Figure 1A is a plan view showing a semiconductor memory device according to an embodiment of the present disclosure. Figure 1B is along Figure 1A A cross-sectional view of...

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PUM

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Abstract

The invention provides a semiconductor memory device and a manufacturing method of the semiconductor memory device. The semiconductor memory device includes: a source structure; a laminated conductive layer overlapping the source structure; a first selection conductive layer and a second selection conductive layer disposed between the source structure and the stacked conductive layer; a laminated insulating layer disposed between the first selection conductive layer and the laminated conductive layer and between the second selection conductive layer and the laminated conductive layer; and a separation insulating structure disposed between the first selection conductive layer and the second selection conductive layer.

Description

technical field [0001] Various embodiments of the present disclosure may relate to a semiconductor memory device and a method of manufacturing the semiconductor memory device, and more particularly, to a three-dimensional semiconductor memory device and a method of manufacturing the same. Background technique [0002] A semiconductor memory device includes memory cells configured to store data. A three-dimensional (3D) semiconductor memory device may include three-dimensionally arranged memory cells, thereby reducing an area occupied by the memory cells on a unit area of ​​a substrate. [0003] In order to increase the degree of integration of a three-dimensional semiconductor memory device, the number of stacked memory cells is increased. As the number of stacked memory cells increases, the operational reliability of a three-dimensional semiconductor memory device may decrease. Contents of the invention [0004] According to an embodiment of the present disclosure, a se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11568H01L27/11578H10B43/30H10B43/20H10B43/27
CPCH10B43/20H10B43/30H01L2224/08145H01L24/80H01L24/08H01L2224/80895H01L2224/80896H10B43/50H10B43/40H10B43/27H01L2924/00014H01L23/528H01L29/41766
Inventor 李南宰
Owner SK HYNIX INC