Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Switching power supply based on diamond field effect transistor

A technology of field effect tube and switching power supply, which is applied in the field of switching power supply based on diamond field effect tube, can solve the problems of power consumption and other problems, and achieve the effect of reducing ripple, reducing volume and reducing inductance value

Pending Publication Date: 2022-05-13
HANGZHOU DIANZI UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the contrary, in the process of generating the output voltage of the linear power supply, the transistor works in the amplification area and consumes power itself

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Switching power supply based on diamond field effect transistor
  • Switching power supply based on diamond field effect transistor
  • Switching power supply based on diamond field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] see figure 1 , is shown as a structural block diagram of a switching power supply based on a diamond field effect transistor according to an embodiment of the present invention, including a power supply part 10, a switch part 20, a control part 30, an energy storage part 40, a filter part 50, a load 60 and a feedback part 70, in,

[0033] The power supply part 10 supplies power to the switch part 20 and the control part 30; the switch part...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Inductanceaaaaaaaaaa
Login to View More

Abstract

The invention discloses a diamond field effect transistor-based switching power supply, which comprises a power supply part, a switch part, a control part, an energy storage part, a filtering part, a load and a feedback part, and is characterized in that the power supply part supplies power to the switch part and the control part; the switch part comprises a diamond field effect transistor; the control part outputs an ultrahigh frequency PWM wave signal to the switch part so as to control the on-off of the diamond field effect transistor; the input of the energy storage part is connected with the output of the switch part; the filtering part comprises a capacitor, the input is connected with the output of the filtering part, and the output is connected with a load; the feedback part is connected with the output of the filtering part, collects output voltage and output current and feeds back to the control part. The field effect transistor made of diamond has the advantages of high switching frequency, large forbidden band width, low on-resistance, high thermal conductivity and the like.

Description

technical field [0001] The invention belongs to the technical field of switching power supplies, and in particular relates to a switching power supply based on a diamond field effect transistor. Background technique [0002] The switching power supply is different from the linear power supply. Most of the switching transistors used by the switching power supply are switched between the fully open mode (saturation region) and the fully closed mode (cut-off region). These two modes have the characteristics of low dissipation. The conversion will have higher dissipation, but the time is very short, so it saves energy and generates less waste heat. [0003] Ideally, switching power supplies themselves consume no power. Voltage regulation is achieved by adjusting the turn-on and turn-off times of transistors. On the contrary, in the process of generating the output voltage of the linear power supply, the transistor works in the amplification area and consumes power itself. The...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02M3/335H02M3/158H02M1/14
CPCH02M3/33569H02M3/33523H02M3/158H02M1/14
Inventor 严丽平汤一凡刘杰程知群
Owner HANGZHOU DIANZI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products