Rhodium film and method of formation
a technology of rhodium film and thin film, applied in the direction of coating, transistor, chemical vapor deposition coating, etc., can solve the problems of poor conformality of rf sputtering process, damage to pores or holes in thin film, etc., and achieve good step coverage and good step coverage
Inactive Publication Date: 2006-07-20
MICRON TECH INC
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Benefits of technology
The method achieves smooth, continuous, and highly uniform rhodium films with improved step coverage and reduced carbon content, suitable for capacitor electrodes, enabling better performance in future semiconductor generations with complex geometries.
Problems solved by technology
These technologies, however, have some disadvantages.
For example, the RF sputtering process yields poor conformality, while the spin deposition of thin films is a complex process, which generally involves two steps: an initial step of spinning a stabilized liquid source on a substrate usually performed in an open environment, which undesirably allows the liquid to absorb impurities and moisture from the environment; and a second drying step, during which evaporation of organic precursors from the liquid may leave damaging pores or holes in the thin film.
Although the CVD processing technologies afford good step coverage, as the geometries of the future generations of semiconductors become extremely aggressive, these processing technologies will not be able to afford better step coverage, that is a high degree of thickness and / or uniformity control over a complex topology for thin films of such future generation of semiconductors.
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[0014] In the following detailed description, reference is made to various specific embodiments in which the invention may be practiced. These embodiments are described with sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be employed, and that structural, logical, and electrical changes may be made.
[0015] The term “substrate” used in the following description may include any semiconductor-based structure. Structure must be understood to include silicon, silicon-on insulator (SOI), silicon-on sapphire (SOS), doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures. The semiconductor also need not be silicon-based. The semiconductor could be silicon-germanium, germanium, or gallium arsenide. When reference is made to a substrate in the following description, previous process steps may have been utilized to form reg...
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Abstract
A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.
Description
FIELD OF THE INVENTION [0001] The present invention relates to the field of semiconductor integrated circuits and, in particular, to a novel method for forming high quality rhodium (Rh) films. BACKGROUND OF THE INVENTION [0002] Thin film technology in the semiconductor industry requires thin deposition layers, increased step coverage, large production yields, and high productivity, as well as sophisticated technology and equipment for coating substrates used in the fabrication of various devices. For example, process control and uniform film deposition directly affect packing densities for memories that are available on a single chip or device. Thus, the decreasing dimensions of devices and the increasing density of integration in microelectronics circuits require greater uniformity and process control with respect to layer thickness. [0003] Various methods for depositing thin films of complex compounds, such as metal oxides, ferroelectrics or superconductors, are known in the art. ...
Claims
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IPC IPC(8): H01L21/44C23C16/04C23C16/18C23C16/44C23C16/455H01L21/02H10B12/00
CPCC23C16/045C23C16/16C23C16/18C23C16/4401C23C16/45553H01L27/10811H01L27/10852H01L28/55H01L28/60H01L28/65H10B12/312H10B12/033
InventorMARSH, EUGENE P.UHLENBROCK, STEFAN
OwnerMICRON TECH INC