Semiconductor device and method for fabricating the same

a semiconductor device and semiconductor technology, applied in the field of semiconductor devices, can solve problems such as continuous increase, achieve the effects of reducing undesirable sidewall growth, reducing the delamination of the plurality of insulating films, and improving the yield of semiconductor devices

Inactive Publication Date: 2021-04-29
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present semiconductor device design reduces stress on wiring, which helps prevent delamination of insulating films and improves yield. A passivation process also prevents unwanted growth of passivation layers.

Problems solved by technology

However, a variety of issues arise during the scaling-down process, and such issues are continuously increasing.
Therefore, challenges remain in achieving improved quality, yield, performance, and reliability and reduced complexity.

Method used

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  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same

Examples

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Embodiment Construction

[0042]The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.

[0043]F...

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Abstract

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, an intrinsically conductive pad positioned above the substrate, a stress relief structure positioned above the substrate and distant from the intrinsically conductive pad, and an external bonding structure positioned directly above the stress relief structure.

Description

TECHNICAL FIELD[0001]The present disclosure relates to a semiconductor device and a method for fabricating the semiconductor device, and more particularly, to a semiconductor device with a stress relief structure and a method for fabricating the semiconductor device with a stress relief structure.DISCUSSION OF THE BACKGROUND[0002]Semiconductor devices are used in a variety of electronic applications, such as personal computers, cellular telephones, digital cameras, and other electronic equipment. The dimensions of semiconductor devices are continuously being scaled down to meet the increasing demand of computing ability. However, a variety of issues arise during the scaling-down process, and such issues are continuously increasing. Therefore, challenges remain in achieving improved quality, yield, performance, and reliability and reduced complexity.[0003]This Discussion of the Background section is provided for background information only. The statements in this Discussion of the Ba...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L23/00H01L23/522H01L23/528H01L27/108H01L21/02H10B12/00
CPCH01L24/05H01L2224/05647H01L23/528H01L27/10823H01L27/10855H01L27/10876H01L21/02063H01L24/03H01L27/10814H01L2224/0225H01L2224/02251H01L2224/02381H01L2924/35H01L2224/05144H01L2224/05155H01L23/5226H01L23/58H01L23/5283H01L23/5381H01L23/562H01L23/522H01L23/53295H01L21/76831H01L2224/0401H01L2224/04042H01L24/02H01L2224/02235H01L24/13H01L24/11H01L2224/02165H01L2224/05082H01L2224/05083H01L2224/05022H01L2224/02313H01L2224/0348H01L2224/03462H01L2224/03464H01L2224/03901H01L2224/05024H01L2224/05541H01L2224/05005H01L2224/05157H01L2224/0239H01L2224/05186H01L2224/131H01L2224/05644H01L2224/05164H01L2224/05147H01L2224/0226H01L2224/0219H01L2224/05624H10B12/34H10B12/315H10B12/033H10B12/50H10B12/053H10B12/485H01L2224/45099H01L2924/00012H01L2924/00014H01L2224/033H01L2924/013H01L2924/01013H01L2924/00013H01L2924/05442H01L2924/01029H01L2924/07025H01L2924/0695H01L2924/047H01L2924/0665H01L2924/0105H01L2924/014H01L2924/01079H01L2924/049H01L2924/01028H10B12/0335
InventorHUANG, TSE-YAO
OwnerNAN YA TECH