Semiconductor device
a technology of mikro-conductor and fuse element, which is applied in the direction of emergency protective device, basic electric element, instruments, etc., can solve the problems of esd detection and programming error of fuse element, and achieve the effect of preventing the programmed of fuse elemen
Active Publication Date: 2013-02-26
PANASONIC SEMICON SOLUTIONS CO LTD
View PDF17 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
[0007]The present invention aims to avoid programming the fuse element erroneously even if a surge voltage is applied from a program power supply to a semiconductor device including an electric fuse circuit.
[0013]According to the foregoing aspect, the program preventive circuit is disposed between the program power supply and the grounding and in parallel with the electric fuse circuit, and this program preventive circuit is structured such that a part of the surge current can flow in the program preventive circuit when the surge voltage is applied between the program power supply and the grounding. This structure allows distributing the surge current into the electric fuse circuit and the program preventive circuit even if the surge voltage is applied from the program power supply, so that an electric current flowing through the fuse element of the electric fuse circuit can be reduced. As a result, the fuse element can be prevented from being programmed erroneously.
[0014]The present invention thus can prevent the fuse element of the electric fuse circuit integrated in the semiconductor device from being erroneously programmed even if the program power supply generates the surge voltage.
Problems solved by technology
In recent years, the measure against ESD (electrostatic discharge) has become a critical issue for digital products.
When a program power-supply for programming a fuse element generates a surge current, a large amount of electric current runs through the fuse element of the electric fuse circuit in a semiconductor device, whereby the fuse element can be programmed erroneously.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0039]An exemplary embodiment of the present invention is demonstrated hereinafter with reference to the accompanying drawings.
[0040]FIG. 1 is a plan view illustrating a structure of a system LSI as a semiconductor device in accordance with the embodiment. This system LSI includes IO cell region 2 in which a number of IO (input output) cells exist. This IO cell region 2 also includes other cells, e.g. a power supplying cell and a dummy cell. Program power supplying cell 6, of which supply voltage is VDD_C, and grounding cell 7, of which grounding voltage is GND, are disposed in IO cell region 2. Center region 8 inside IO cell region 2 includes logic circuits, e.g. memory circuits 4. In this paper, the region surrounded by the IO cell region disposed on a periphery of a chip is referred to as a center region. The center region is not limited to a center section of a surface region of the chip, but it includes a wider region extending from the vicinity of the IO cell region to the cen...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A semiconductor device includes an electric fuse circuit and a program protective circuit. The electric fuse circuit includes a fuse element and a transistor connected together in series and placed between a program power supply and a grounding, and controlling sections. The program protective circuit is placed in parallel with the electric fuse circuit and between the program power supply and the grounding. When a surge voltage is applied between the program power supply and the grounding, the foregoing structure allows a part of a surge electric current can flow through the program protective circuit.
Description
BACKGROUND[0001]1. Technical Field[0002]The present invention relates to a semiconductor device including an electric fuse circuit.[0003]2. Background Art[0004]An electric fuse has been used as a programmed device working as a redundant device for failure relief in a semiconductor device such as a system LSI. The programmed electric fuse allows a great enough electric current to run through a fuse element thereof so that a part of the fuse element can be broken for, and the fuse element is thus changed from a low resistance member to a great resistance member.[0005]“Unexamined Japanese Patent Application Publication No. 2006-114804” discloses an instance of an electric fuse circuit including a fuse element and its operation. “Unexamined Japanese Patent Application Publication No. 2008-153588” discloses an electric fuse circuit that can avoid programming erroneously the fuse element in the case of turning on or off the power supply of the system LSI, or in the case of a partial cut-o...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(United States)
IPC IPC(8): H01H37/76
CPCG11C17/18H01L27/0207H01L27/0288H01L23/5256H01L2924/0002H01L27/10H01L2924/00
Inventor KAWASAKI, TOSHIAKIAGATA, YASUHIROSHIRAHAMA, MASANORIKOUGAMI, TOSHIHIROARAI, KATSUYA
Owner PANASONIC SEMICON SOLUTIONS CO LTD