The present invention provides a
crystal and its
growth control method, device, and equipment, relating to the fields of
semiconductor and photovoltaic
crystal manufacturing technology. The
crystal growth control method includes: during the crystal isodiameter growth process, obtaining the actual average pulling speed for at least a portion of a preset time window, wherein the time window slides once each time a first time passes; using a second time as a
processing cycle, adjusting the preset base pulling speed for the next
processing cycle based on the actual average pulling speed for at least a portion of the window after each sliding of the time window in the current
processing cycle, to obtain a target pulling speed for the next processing cycle, and controlling the
heating power in the next processing cycle based on the target pulling speed for the next processing cycle, wherein the second time is greater than the first time. This can reduce the deviation between the target pulling speed and the actual average pulling speed, thereby reducing the probability of crystal edge breakage and improving production efficiency.