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2results about How to "Improve key performance" patented technology

Method for deep purification of titanium sulfate solution of titanium dioxide by sulfuric acid method and bifunctional mesoporous silica adsorbent

PendingCN122582637ARemove selectivity boostAchieve highly selective rejection
The application discloses a kind of sulphuric acid method titanium dioxide titanium liquid vanadium chromium manganese depth purification method and bifunctional mesoporous silica adsorbent, belong to titanium dioxide technical field.The application is with amino methylene phosphonic acid / 8-hydroxyquinoline bifunctional mesoporous silica adsorbent as adsorption material, under ORP-150 to-80mV, temperature 45~55 ℃, to sulphuric acid method titanium liquid is carried out multistage series connection adsorption purification, realizes the selective adsorption of V, Cr, Mn, V≤5mg / L in titanium liquid after purification, Cr≤8mg / L, Mn≤15mg / L, removal rate all reach 80% or more, the rutile type titanium dioxide prepared in whiteness, colour strength and color stability under ultraviolet irradiation condition etc.All have obvious promotion, adsorbent can be recycled, it is suitable for clean production of high-quality rutile type titanium dioxide.
Owner:PANZHIHUA XINGZHONG TITANIUM IND CO LTD +1

An optical waveguide device structure and method of forming the same

The application discloses an optical waveguide device structure and a forming method thereof, and comprises the following steps: forming a waveguide functional layer, a hard mask layer and a photoresist pattern on a substrate; performing first etching on the hard mask layer through the photoresist pattern to form a hard mask pattern; using a first free radical to perform first processing on a first sidewall of the hard mask pattern with the photoresist pattern, so as to reduce the surface roughness of the first sidewall; performing second etching on the waveguide functional layer through the hard mask pattern after the photoresist pattern is removed to form a waveguide pattern; using a second free radical to perform second processing on a second sidewall of the waveguide pattern with the hard mask pattern, so as to reduce the surface roughness of the second sidewall; and removing the hard mask pattern. The application can significantly improve the smoothness of the sidewall of the waveguide pattern, thereby improving the key performance of the device.
Owner:SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD