4results about How to "Improve key performance" patented technology

The application discloses an integrated circuit parameter optimization method and system based on emulator sensitivity information and belongs to the technical field of integrated circuit electronic design automation. The method comprises the following steps: S1, acquiring design parameters, constraint conditions and target performance requirements and establishing a parameterized model; S2, calling an emulator to acquire performance response data and sensitivity information; S3, judging whether the optimization requirements are met according to the performance response, and if not, determining a parameter adjustment strategy based on the sensitivity information and generating new parameters; and S4, re-inputting the updated parameters into the emulator for iterative optimization until a termination condition is met. The application synchronously acquires performance and sensitivity information through a single simulation call, guides the parameter evolution direction by using a sensitivity matrix, realizes multi-parameter decoupling in combination with orthogonal transformation, effectively reduces the number of simulation calls, avoids local optimum and iterative divergence, and realizes efficient and stable automatic optimization of complex integrated circuit parameters.

A fluid and solid contact interface simulation method based on flow-solid interface coupling dynamic mesh, the initial mesh of the target geometric model is divided, and the flow field, temperature field and interface evolution driving field are solved according to the initial conditions and boundary conditions, after the theoretical displacement amount of the mesh node in each time step is obtained, based on the interface coupling dynamic mesh (ICDM) method, the local real normal displacement scalar is sequentially executed node state lock protection, equivalent normal projection and parallel synchronous processing; then through the grid node movement, the grid coordinates are updated and the flow field, temperature field and interface evolution driving field are re-solved on the updated grid to obtain a new round of node displacement, and whether the simulation reaches the preset time or the deformation target is judged; finally, the final interface topography, grid node coordinates, grid quality, flow field distribution, temperature field distribution, pressure field distribution and / or heat exchange performance parameters are output. The present application can realize the synchronous iterative update of the deposition behavior and the temperature field and even the flow field, dynamically reflect the influence of deposition on the heat exchange performance, thereby greatly improve the simulation accuracy and physical consistency and be suitable for the subsequent machine learning reverse design of a large number of structure parameters and heat exchange performance samples.

The application discloses a kind of sulphuric acid method titanium dioxide titanium liquid vanadium chromium manganese depth purification method and bifunctional mesoporous silica adsorbent, belong to titanium dioxide technical field.The application is with amino methylene phosphonic acid / 8-hydroxyquinoline bifunctional mesoporous silica adsorbent as adsorption material, under ORP-150 to-80mV, temperature 45~55 ℃, to sulphuric acid method titanium liquid is carried out multistage series connection adsorption purification, realizes the selective adsorption of V, Cr, Mn, V≤5mg / L in titanium liquid after purification, Cr≤8mg / L, Mn≤15mg / L, removal rate all reach 80% or more, the rutile type titanium dioxide prepared in whiteness, colour strength and color stability under ultraviolet irradiation condition etc.All have obvious promotion, adsorbent can be recycled, it is suitable for clean production of high-quality rutile type titanium dioxide.

The application discloses an optical waveguide device structure and a forming method thereof, and comprises the following steps: forming a waveguide functional layer, a hard mask layer and a photoresist pattern on a substrate; performing first etching on the hard mask layer through the photoresist pattern to form a hard mask pattern; using a first free radical to perform first processing on a first sidewall of the hard mask pattern with the photoresist pattern, so as to reduce the surface roughness of the first sidewall; performing second etching on the waveguide functional layer through the hard mask pattern after the photoresist pattern is removed to form a waveguide pattern; using a second free radical to perform second processing on a second sidewall of the waveguide pattern with the hard mask pattern, so as to reduce the surface roughness of the second sidewall; and removing the hard mask pattern. The application can significantly improve the smoothness of the sidewall of the waveguide pattern, thereby improving the key performance of the device.