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Solid-state image sensor

A solid-state imaging device, semiconductor technology, applied to radiation control devices, etc., can solve the problems of difficult signal voltage, low detection sensitivity of output signal, and difficulty in fully reducing the floating diffusion area 108

Inactive Publication Date: 2008-06-11
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] exist Figure 24 In the illustrated example of the conventional solid-state imaging device, the capacitance C between the floating diffusion region 108 and the output gate electrode 106 is reduced by providing a predetermined distance L between the floating diffusion region 108 and the output gate electrode 106. 1 , but it is considered that this method is only sufficient to reduce the total capacitance C of the suspended diffusion region 108 fd it is difficult
Therefore, since it becomes difficult to sufficiently increase the signal voltage taken out from the floating diffusion region 108 to the output amplifier circuit 114, in the output amplifier circuit 114, it often becomes difficult to detect the signal taken out from the floating diffusion region 108.
As a result, there is a problem that the detection sensitivity of the output signal is low

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no. 1 Embodiment approach

[0051] First, refer to figure 1 and figure 2 , the configuration of the solid-state imaging device according to the first embodiment will be described.

[0052] The solid-state imaging device of the first embodiment is, for example, figure 1 As shown, there is an n-type silicon substrate 1 . Furthermore, this n-type silicon substrate 1 is an example of the "semiconductor substrate" of the present invention. In addition, a p-type well region 2 is formed in a depth region of about 0.5 μm or more and about 4 μm or less from the upper surface of the n-type silicon substrate 1 . In addition, on the surface of the p-type well region 2 is formed a 16 cm -3 The impurity concentration of N - type transmission channel region 3 . This transfer channel region 3 is an example of the "charge storage part" of the present invention. Furthermore, transmission channel region 3 is formed in a region from the upper surface of n-type silicon substrate 1 to a depth of about 0.5 μm. Furt...

no. 2 Embodiment approach

[0077] Below, refer to Figure 9 and Figure 10 , the configuration of the solid-state imaging device according to the second embodiment will be described.

[0078] exist Figure 9 In the solid-state imaging device of the second embodiment shown, unlike the solid-state imaging device of the first embodiment described above, in the region between the floating diffusion region 8 and the output gate electrode 6 of the n-type silicon substrate 1, an area having approximately 10 18 cm -3 The impurity concentration of N ++ type impurity region 16 . Moreover, the N + The impurity region 16 is an example of the "second impurity region" of the present invention. That is to say, in the region between the suspended diffusion region 8 of the n-type silicon substrate 1 and the output gate electrode 6, a - The impurity concentration of the type transmission channel region 3 (about 10 16 cm -3 ) is higher than N ++ The impurity concentration (about 10 20 cm -3 ) is even lower im...

no. 3 Embodiment approach

[0092] Below, refer to Figure 18 and Figure 19 , the configuration of the CMOS image sensor according to the third embodiment of the present invention will be described.

[0093] In the CMOS image sensor of the third embodiment, as Figure 18 As shown, unlike the solid-state imaging device of the first embodiment described above, on the surface of the p-type well region 2 of the n-type silicon substrate 1, instead of figure 1 shown in transmission channel region 3, formed with N - type photodiode layer 23 . Furthermore, this photodiode layer 23 is an example of the "photoelectric conversion part" and the "charge storage part" of the present invention. The photodiode layer 23 has a function of generating signal charges by receiving light and performing photoelectric conversion, and storing the generated signal charges. In addition, a plurality of photodiode layers 23 are formed in a matrix on the surface of the p-type well region 2 . In addition, in the third embodimen...

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Abstract

A solid-state image sensor capable of improving detection sensitivity for an output signal is provided. This solid-state image sensor comprises a first gate electrode formed on a semiconductor substrate, a first impurity region formed on the semiconductor substrate at a first distance from the first gate electrode for receiving the signal charges and a second gate electrode formed at a second distance from the first impurity region for discharging unnecessary signal charges after extraction of a voltage signal from the first impurity region. The first distance between the first impurity region and the first gate electrode is larger than the second distance between the first impurity region and the second gate electrode.

Description

technical field [0001] The present invention relates to a solid-state imaging device, and more particularly, to a solid-state imaging device including an impurity region that takes out a voltage signal while receiving signal charges. Background technique [0002] Conventionally, a solid-state imaging device having an impurity region in which a voltage signal is taken out simultaneously with the inflow of signal charges has been common. Such a solid-state imaging device is disclosed in Japanese Patent No. 3263197, for example. [0003] Figure 24 It is a cross-sectional view showing an example of a conventional solid-state imaging device having the same configuration as the solid-state imaging device disclosed in Japanese Patent No. 3263197. Figure 25 for Figure 24 A potential diagram of a conventional solid-state imaging device is shown. refer to Figure 24 , An example of a conventional solid-state imaging device includes an n-type silicon substrate (n-sub) 101 . A p-t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 海田孝行
Owner SANYO ELECTRIC CO LTD
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