Minisize external cavity high power semi-conductor array steadily electing selecting supermode technique

Abstract

The present invention provides a minitype outer cavity deformation measurement technology and a compensation technology for serving an ultra high power semiconductor array to use an minitype outer cavity lock phase. An ultra short length outer cavity of the ultra high power semiconductor array is arranged when a base super mode oscillation is arranged, adapted and selected. After the base super mode is oscillated, the automatic measuring and compensation way which causes the length change of the outer cavity for the residual thermal effect avoids the outer cavity deformation to result in oscillation of a non-base super mode, to make the ultra high power semiconductor array steadily select base super mode oscillation. An outer cavity mirror sensing light source fixed at one end of the fixedequipment of an outer cavity mirror emits laser parallel to the mirror surface of the outer cavity mirror, after a mirror surface ground tightly attaching with the outer cavity mirror reaches to an outer cavity mirror detector which is fixed at the other end of the fixed equipment of the outer cavity mirror, and the mirror surface of the outer cavity mirror is not distorted, all light beams can reach to the outer cavity mirror detector, without block, and the corresponding output is zero; after the semiconductor array emits light for a period of time, because laser outputted by the array functions on the outer cavity mirror, the surface of the outer cavity mirror is swelled, the cavity length of the outer cavity is shortened, and the shortened length of the cavity length is equal to the swelling capacity. At this time, because the part light beam emitted by the outer cavity mirror sensing light source is blocked by the swelled surface of the outer cavity mirror, the light beam can notreach to the outer cavity mirror detector.

Description

technical field [0001] The invention belongs to the micro-external cavity deformation measurement technology and compensation technology that uses the micro-external cavity phase-locked to serve ultra-high-power semiconductor arrays, and relates to ultra-short-length external cavities that are installed and adapted to select base super-mode oscillations for ultra-high-power semiconductor arrays, and oscillate After the basic supermode, the method of automatic measurement and compensation for the change of the length of the external cavity caused by the residual thermal effect, etc., involves avoiding the vibration of the non-fundamental supermode caused by the deformation of the external cavity, so that the ultra-high power semiconductor array can stably select the fundamental supermode oscillation . Background technique [0002] The quantum efficiency of the semiconductor array is high, the output wavelength range covers 570nm to 1600nm, and the working life can reach milli...

AI Technical Summary

Problems solved by technology

When an ultra-high-power semiconductor array is matched with an ultra-short-length external cavity for phase-locking, after the miniature external cavity mirror makes the array selection base supermode oscillate, although the cooling subsystem can ensure the continuous operation of the array, the residual thermal effect will still make the external cavity The expansion of the mirror surface leads to the deviation of the length of the external cavity. When the luminous power is large to a certain extent, the deviation of the length of the external cavity will exceed the upper limit of the allowable deviation. Therefore, it is necessary to select the ultra-high power two The three-dimensional semiconductor array takes measures to stabilize the length of the external cavity, so that the micro-external cavity high-power semiconductor array can stably select the basic supermode; at the same time, the degree of offset changes with the change of the luminous power, and in actual engineering, the luminous The power must adapt to the project requirements and change with the changes of the project requirements, so that the corresponding stable selection base supermode measure must be to automatically track the changes in the length of the external cavity and make appropriate adjustments in time to ensure that the array outputs high-quality laser beams. , the present invention provides a micro-external-cavity high-power semiconductor array automatic stable selection base supermode technology

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