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Memory device and its data reading circuit

A data reading and memory technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as circuit complexity, and achieve the effect of reducing pre-charging circuits

Inactive Publication Date: 2008-07-16
PRINCETON TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the current trend is to design the working voltage of the memory device to be lower and lower, the voltage to be generated by the pre-charging circuit 10 is also getting smaller and smaller, and to generate a stable constant voltage may make the circuit of the pre-charging circuit 10 become Therefore, how to provide a memory data reading circuit that can reduce the pre-charging circuit is the direction of researchers' thinking

Method used

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  • Memory device and its data reading circuit
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  • Memory device and its data reading circuit

Examples

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Embodiment Construction

[0021] figure 2 It is a circuit diagram of an embodiment of the memory data reading circuit according to the present invention. The amplifier 21 has two input terminals respectively coupled to the first bit line BL and the second bit line BL. The first switch 23 is coupled to the first bit line BL, and the second switch 24 is coupled to the second bit line BL. The anode of the diode 22 is coupled to the voltage source VDD, and its cathode is coupled to the first switch 23 and the second switch 24, and the conduction of the first switch 23 and the second switch 24 enables the voltage source VDD to be connected to the first bit line BL and the first bit line BL and respectively. The second bit line BL is precharged. The first transistor 25 has a first source, a first drain and a first gate, wherein the first source is coupled to the first bit line BL, and the first drain is coupled to a data storage unit 27 , the first gate is coupled to a word line WL. The second transisto...

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Abstract

The invention relates to a memory and a data read circuit of the memory, in particular to a read circuit of the memory data. By adopting the property of the low operation voltage of the memory, a diode is coupled between a set of bit line inside the memory; by adopting the phenomenon that the voltage drop generated by the diode is about one half of the operation voltage, a prior complicated precharging circuit is replaced by the diode. The memory and the data read circuit of the memory which are provided by the invention can reduce the precharging circuit.

Description

technical field [0001] The present invention is a memory data reading circuit, especially a memory data reading circuit that can reduce pre-charging circuits. Background technique [0002] The known memory data reading circuit utilizes a pre-charging circuit to pre-charge the bit lines coupled to the memory cells to be read, so as to speed up the speed of memory reading. Please refer to figure 1 . figure 1 A memory data read circuit utilizing a pre-charge circuit is known. exist figure 1 In the process, the amplifier will know the data stored in the memory according to the voltage difference between the bit lines BL and BL. Generally speaking, if the operating voltage of the memory is VDD, the precharge circuit 10 will charge the bit lines BL and BL to In order to obtain an optimal operating point, the function of the pre-charging circuit 10 is to provide a voltage of the voltage source. Since the current trend is to design the working voltage of the memory device t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/06G11C7/22
Inventor 陈彦文周彦云
Owner PRINCETON TECHNOLOGY