Process for discriminating high growth rate chemical vapour deposition diamond single crystal

A chemical vapor deposition and diamond single crystal technology, applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., to achieve the effect of simple methods

Inactive Publication Date: 2008-11-26
JILIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to disclose a method for distinguishing nitrogen-doped high-speed chemical vapor deposition diamond single crystal (abbreviated as N-CVD diamond single crystal) from other diamond single crystals, including natural diamond single crystals, high-temperature and high-pressure artificially synthesized diamond single crystals. crystal etc., the method of the present invention judges by analyzing the regular distribution of nitrogen content in the N-CVD diamond single crystal

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  • Process for discriminating high growth rate chemical vapour deposition diamond single crystal
  • Process for discriminating high growth rate chemical vapour deposition diamond single crystal
  • Process for discriminating high growth rate chemical vapour deposition diamond single crystal

Examples

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Embodiment 1

[0033] In this embodiment, the PL spectra at different positions are measured on the growth surface of the N-CVD diamond single crystal. The size of the tested N-CVD diamond single crystal seed crystal is about 3×3×1cm 3 , growing 500 μm in 10 hours, the reaction gas flow rate is H 2 / CH 4 / N 2 Equal to 500 / 60 / 2, unit sccm.

[0034] figure 2 The selected PL spectrum detection points on the surface of N-CVD diamond single crystal are indicated. Where 1 is the center point, 3 is the point near the edge, 5 is the point near the corner, 2 is the point on the line segment from the center to the edge, and 4 is the point on the line segment from the center to the corner. You can choose the measurement point on the straight line segment, or you can choose the measurement point at will. Selecting points on the straight line can make the regularity of the intensity of the PL peak (corresponding to the nitrogen content of the N-CVD diamond single crystal) more intuitive.

[0035]...

Embodiment 2

[0037] This example is the PL spectrum of different measurement positions along the growth direction on the side of the N-CVD diamond single crystal. The tested N-CVD diamond single crystal, the seed crystal size is about 3.1×3.1×1.1cm3 , growing 600 μm in 10 hours, the reaction gas flow rate is H 2 / CH 4 / N 2 Equal to 500 / 60 / 1.8, unit sccm. The sample sides were mechanically polished.

[0038] Figure 4 1-6 represent various measurement points on the side of the diamond.

[0039] Figure 5 are the different positions on the sides of the N-CVD diamond single crystal (corresponding to Figure 4 ) PL spectrum. Depend on Figure 5 It can be seen that the intensity of the nitrogen-related characteristic peaks has a certain change rule. Considering the relationship between the nitrogen content and these characteristic peaks, it can be known that the nitrogen content changes gradually along the direction from the growth plane to the seed crystal. After reaching a certain dis...

Embodiment 3

[0041] In order to prove the effectiveness of the present invention, the PL spectrum of a type Ib (100) oriented natural diamond single crystal was measured. Single crystal size 3.6×3.6×1cm 3 .

[0042] Figure 6 is the PL spectrum at different positions on the surface. Figure 7 It is the PL spectrum of different positions on the side. The peak intensity related to nitrogen in its PL spectrum has no obvious regularity.

[0043] Similarly, the peaks related to nitrogen in the PL spectrum of type Ib high-temperature and high-pressure synthetic diamond single crystals have no obvious rules.

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Abstract

The invention discloses a method for identifying high-speed growing chemical vapor deposition diamond single crystal, belonging to the technology field of diamond material. By testing the photoluminescence fluorescence spectrum on the growing surface of the CVD diamond single crystal got by taking the methane, hydrogen and nitrogen as the reactive gas on different positions along the side of the growing direction, the diamond single crystal with regular change of spectra strength is nitrating high-speed chemical vapor deposition diamond single crystal. Therefore, the CVD diamond single crystal can be separated from other diamond single crystals according to the changes of the strength of the photoluminescence fluorescence peak related to the nitrogen content. The method of the invention is simple, suitable and rapid, which can not damage the growing CVD single crystal diamond.

Description

technical field [0001] The invention belongs to the technical field of characterization of diamond single crystal materials, and relates to a method for identifying high-rate-grown chemical vapor deposition (CVD) diamond single crystals. Background technique [0002] At the beginning of the 21st century, the Carnegie Institute of Washington, USA developed a high-speed growth method for homoepitaxial growth of single crystal diamond, with a growth rate as high as 50-150 μm / h, and diamond single crystals of 10 carats and above can be obtained. The CVD method to produce diamond single crystal has the advantages of simple equipment, easy operation, good repeatability, and unlimited crystal growth size. It is becoming the most promising method for producing low-cost, large-grain single crystal diamond. Studies have shown that the obtained CVD diamond single crystal has the same or similar properties as natural diamond. An important question is whether CVD diamond single crystals...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B25/00
Inventor 李红东邹广田王启亮吕宪义
Owner JILIN UNIV
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