Inversion type OLED display device and preparation method thereof

A device, electroluminescent device technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as unsuitable mass production, difficulty in developing and synthesizing new materials, process duplication, and difficulty in control, etc. high efficiency

Inactive Publication Date: 2012-05-30
TSINGHUA UNIV +2
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] 1. Design and use new electron injection (ETL) materials to replace Alq3. Companies such as LG have tried this, but the main problem is that the development and synthesis of new materials are difficult
[0010] 2. Adopting n-type doping structure in ETL, such as doping active metals such as Cs and Li in Alq3, the problem is that it is difficult to copy and control the doping process, and there are problems in the preservation and use of active metals, which is not suitable for mass production
[0011] 3. Using active metals as the electron injection layer, such as using Cs, Li, etc., also faces the problems of storage and use of the above-mentioned active metals, and if using Mg, Ca, etc., there are difficulties such as difficult control of the evaporation process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1) Device structure: Al / Li3N / Alq3 / NPB / HAT / Ag;

[0038] 2) Preparation of cathode structure:

[0039] In the vacuum chamber the pressure is 10 -4 Under the condition of Pa, 200nm Al is prepared by evaporation on the substrate first.

[0040] 3) Preparation of electron injection layer:

[0041] Keeping the pressure of the vacuum chamber constant, lithium nitride was decomposed under the conditions of evaporation rate of 0.05nm / s and evaporation temperature of 420°C to prepare a Li thin film as an electron injection layer material with a film thickness of 0.5nm.

[0042] 4) Preparation of organic light-emitting layer:

[0043] Keeping the pressure of the vacuum chamber constant, the electron transport layer, the light emitting layer, the hole transport layer, the hole injection layer, and the anode structure are sequentially evaporated.

[0044] In this embodiment, the organic layer is first vapor-deposited 50nm thick Alq 3 As the light-emitting layer and the electron...

Embodiment 2

[0048] 1) Device structure: ITO / Li 3 N / Alq3 / NPB / HAT / Ag

[0049] 2) Preparation of cathode structure;

[0050] Etch ITO into the corresponding pattern, as the cathode.

[0051] 3) Preparation of electron injection layer:

[0052] In the vacuum chamber the pressure is 10 -4 Under the condition of Pa, lithium nitride was used to decompose under the conditions of evaporation rate of 0.05nm / s and evaporation temperature of 420°C to prepare a Li thin film as an electron injection layer material with a film thickness of 0.5nm.

[0053] 4) Preparation of organic light-emitting layer:

[0054] Keeping the pressure of the vacuum chamber constant, the electron transport layer, the light emitting layer, the hole transport layer, the hole injection layer, and the anode structure are sequentially evaporated.

[0055] In this embodiment, the organic layer is first vapor-deposited 50nm thick Alq 3 As the light-emitting layer and the electron transport layer, then vapor-deposit 65nm thic...

Embodiment 3

[0059] 1) Device structure: ITO / Li 3 N / Alq 3 / NPB / CuPc / ITO

[0060] 2) Preparation of cathode structure:

[0061] Etch ITO into the corresponding pattern, as the cathode.

[0062] 3) Preparation of electron injection layer:

[0063] In the vacuum chamber the pressure is 10 -4 Under the condition of Pa, lithium nitride was used to decompose under the conditions of evaporation rate of 0.05nm / s and evaporation temperature of 420°C to prepare a Li thin film as an electron injection layer material with a film thickness of 0.5nm.

[0064] 4) Preparation of organic light-emitting layer:

[0065] Keeping the pressure of the vacuum chamber constant, the electron transport layer, the light emitting layer, the hole transport layer, the hole injection layer, and the anode structure are sequentially evaporated.

[0066] In this embodiment, the organic layer is first vapor-deposited 50nm thick Alq 3 As the light-emitting layer and the electron transport layer, then vapor-deposit 20nm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention is related to a new inverted luminous organic electroluminescent component and manufacturing method thereof, belonging to the technical field of organic luminescence display. An organic electroluminescent component includes a substrate, an anode layer, a cathode layer and an organic layer formed between two electrodes. The organic layer includes at least one luminous layer. The cathode is prepared on the substrate. An electronic injection layer is prepared on the cathode. The material of the electronic injection layer adopts at least one of Li, Li3N, CsCO3, Cs, KBH4 or KH. The electronic injection layer is prepared by directly evaporating the compound material of corresponding metal under the vacuum condition. The technical proposal of this invention is capable of preparing a transparent OLED display component with low voltage and high efficiency and a top emission luminous OLED display component.

Description

technical field [0001] The invention relates to a novel inverted light-emitting organic light-emitting device and a preparation method thereof, belonging to the technical field of organic light-emitting displays. Background technique [0002] Organic light-emitting devices have two technical solutions according to the direction of light emission: one is to emit light from the direction of the device substrate, which is called a bottom-emitting device; the other is to emit reflected light from the direction of the device back to the substrate, which is called a top-emitting device. Light emitting devices. At present, most OLED products used in the industry are bottom-emitting devices. However, with the extensive research and development of active matrix electroluminescent devices (hereinafter referred to as AMOLED) products and their application in the preparation of flexible devices, especially the research on OLED displays on soft stainless steel substrates, top-emitting d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56H01L27/32
Inventor 邱勇刘嵩
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap