Semiconductor devices including interconnections and contact plugs and methods of forming the same

Abstract

The present invention discloses a semiconductor device including interlayer conductive contact and a method of forming the same, wherein the semiconductor device comprises: a first insulating layer on an underlying contact region of the semiconductor device, the first insulating layer having an upper surface; a first conductive pattern in a first opening through the first insulating layer, an upper portion of the first conductive pattern being of a first width, an upper surface of the first conductive pattern being recessed relative to the upper surface of the first insulating layer so that the upper surface of the first conductive pattern has a height relative to the underlying contact region that is less than a height of the upper surface of the first insulating layer relative to the underlying contact region; and a second conductive pattern contacting the upper surface of the first conductive pattern, a lower portion of the second conductive pattern being of a second width that is less than the first width.

Description

technical field [0001] The present invention relates to a semiconductor device including an interlayer conductive contact and a method of forming the same. Background technique [0002] Based on the increasing focus on highly integrated electronic devices, semiconductor devices are currently required to operate at higher speeds and lower power and have increased device densities. To achieve these goals, there is a need for devices to be formed with increased integration and for components of the devices to be formed of materials with lower resistivity. However, as the patterns used to form device components become smaller and also as the intervals between adjacent patterns become smaller, the possibility of leakage current conduction between adjacent patterns and components becomes smaller. It's getting bigger. [0003] To illustrate this problem, in the usual configuration of current semiconductor devices, interlayer contacts formed of tungsten are formed in the first int...

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Problems solved by technology

In addition, as the level of integration increases, misalignment of the bitlines with respect to the underlying interlayer contacts is more likely to occur due to the relatively reduced distance between them, so the second form of leakage current can occur at The underlying interlayer contacts are created between adjacent bitlines

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