Fan driving system

A drive system and fan technology, applied in the control system, DC motor rotation control, single motor speed/torque control, etc., can solve the problems of high fan coil peak voltage, inability to derive existing current, failure of fan drive system 10, etc. , to avoid the effect of peak voltage

Inactive Publication Date: 2009-04-01
FITIPOWER INTEGRATED TECH INC
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the driving currents If and Ib generated by the fan driving system 10 cannot be stored in the existing current in the fan coil because the MOSFET1, MOSFET2, MOSFET3, and MOSFET4 in the MOSFET group are all in the off state at the moment of switching. As a result, at the moment of switching the driving current If, Ib, the peak voltage of the fan coil is very high, causing the fan driving system 10 to fail

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fan driving system
  • Fan driving system
  • Fan driving system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0021] See image 3 , the fan driving system 20 provided by the embodiment of the present invention includes a fan driver 21 and a field effect transistor group (MOSFET group) 22 .

[0022] The fan driver 21 has a set of Hall sensing signal input ends, which are N+ input end and N- input end respectively, and the Hall sensing signals N+ and N- come from the Hall sensor on the fan (Fig. not shown), the Hall sensing signals N+ and N− can represent the position of the magnet in the fan. The fan driver 21 also has a set of drive signal output terminals, which are respectively P1, P2, P3, and P4. In addition, the fan driver 21 has a signal VR input terminal P5 and a signal VP input terminal P6, the signal VR input terminal P5 is connected in series with an adjustable resistor R1, and the signal VP input terminal P6 is connected in series with an adjustable resis...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a fan drive system which comprises a fan driver and a MOSEFT set. The fan driver comprises four driving signal output ends. The MOSFET set comprises an N-shaped MOSFET 1, an N-shaped MOSFET 2, a P-shaped MOSFET 3, and a P-shaped MOSFET 4. Drains of the N-shaped MOSFET 1 and the P-shaped MOSFET 3 are connected with a first end of a fan. Drains of the N-shaped MOSFET 2 and the P-shaped MOSFET 4 are connected with a second end of the fan. Grids of four MOSFETs are respectively connected with the four driving signal output ends. The MOSFET set also comprises a first diode, a second diode, a third diode, a fourth diode. The anode of the first diode and the cathode of the third diode are connected with the first end of the fan. The anode of the second diode and the cathode of the fourth diode are connected with the second end of the fan. The cathodes of the first diode and the second diode are connected with power supply voltage. The anodes of the third diode and the fourth diode are grounded.

Description

technical field [0001] The invention relates to a fan drive system. Background technique [0002] see figure 1 , an existing fan driving system 10, which includes a fan driver 11 and a field effect transistor (MOSFET) group 12. The MOSFET group 12 includes four MOSFETs, which are respectively a first field effect transistor (MOSFET1), a second field effect transistor (MOSFET2), a third field effect transistor (MOSFET3), and a fourth field effect transistor (MOSFET4). The fan driver 11 is used to receive a group of Hall sensing signals N+ and N- sensed by a Hall sensor (not shown) on the fan, and send signals to the gates of MOSFET1, MOSFET2, MOSFET3, and MOSFET4 respectively. (Gate) G1, G2, G3, G4 output a driving signal VG1, VG2, VG3, VG4, so that a pair in the MOSFET group, for example: MOSFET1 and MOSFET4, MOSFET2 and MOSFET3, are turned on at the same time. [0003] If MOSFET1 and MOSFET4 in the MOSFET group are turned on, the drive current If in the electrical loop f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): H02P6/08H02P6/16
CPCH02P7/0044H02P7/04
Inventor林凯评林崇仁
OwnerFITIPOWER INTEGRATED TECH INC