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High crystalline quality synthetic diamond

A single crystal diamond, diamond technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as difficult to eliminate structural defects

Active Publication Date: 2012-07-18
EHLEMENT SIKS TECHZ PTI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although some prior art (article by V.D. Antsygin in Optoelectronics Instrumentation and Data Processing (1998) No. 1p9) has shown improved crystallographic integrity in BARS-grown type Ib diamonds when annealed at 2100°C, in types Ib and IIa Extended defects and annealing mechanisms are quite different, and the prior art teaches that it is very difficult to eliminate structural defects in diamonds containing low concentrations of nitrogen

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0254] Based on the method of the present invention, a temperature gradient method is used to grow HPHT stones with low nitrogen concentration from the synthetic type Ib HPHT seeds in the as-grown state. The precursor from which the crystals are taken is first subjected to mechanical sorting to obtain improved material. Sorting is done by magnetic separation to eliminate crystals with metal inclusions. Further sorting is performed by shape selection using a shaker table to improve the shape factor of the crystals. Further sorting is carried out using a screening system with small size spacing between mesh openings, typically to obtain particles with a size not greater than 550 microns and not less than 500 microns. Ultimately, one skilled in the art examines a smaller number of crystals processed through the steps outlined above to select a suitable crystal and select one preferred facet of the crystal with a preferred orientation such as (001) orientation. Selection was mad...

Embodiment 2

[0264] Based on the method described in the present invention, a temperature gradient method is used to grow HPHT stones with low nitrogen concentration from the synthetic type Ib HPHT seeds in the as-grown state. The precursor from which the crystals are taken is first subjected to mechanical sorting to obtain improved material. Sorting is done by magnetic separation to eliminate crystals with metal inclusions. Further sorting is performed by shape selection using a shaker table to improve the shape factor of the crystals. Further sorting is performed using a screening system with small size spacing between mesh openings, typically to obtain particles with a size no greater than 550 microns and no less than 500 microns. Ultimately, one skilled in the art examines a smaller number of crystals processed through the steps outlined above to select a suitable crystal and select one preferred facet of the crystal with a preferred orientation such as (001) orientation. Selection w...

Embodiment 3

[0280]Two HPHT Type IIa substrates were prepared as described in the Summary of the Invention and Examples 1 and 2. Substrate A (with dimensions of 3.42mm x 3.26mm x 0.53mm) was annealed at 2700K under a stabilizing pressure in order to reduce the {111} stacking fault density. Substrate B (having dimensions of 4.81 mm x 3.56 mm x 0.67 mm) was not subjected to such annealing. Substrates A and B were then used in subsequent CVD deposition in a microwave plasma CVD system under the following reactor conditions: pressure of 190 Torr, substrate temperature of 800-860°C measured using an optical pyrometer, 4050 sccm H 2 , 54sccm Ar, 290sccm CH 4 , and 10sccm with H 2 B diluted to 20ppm 2 h 6 . A boron-doped CVD diamond layer with a thickness of about 400 μm was thus deposited onto both substrates. The CVD diamond layer grown on substrate A is referred to as "CVD layer A", and the CVD diamond layer grown on substrate B is referred to as "CVD layer B".

[0281] After removing ...

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Abstract

The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterised by X-ray topography is less than 400 / cm<2> over an area of greater than 0.014 cm<2>. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterized by X-ray topography of less than 400 / cm<2> over an area greater than 0.014 cm<2>; an optical isotropy of less than 1*10<-5> over a volume greater than 0.1 mm<3>; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds.

Description

[0001] preamble [0002] The present invention relates to synthetic diamonds of high crystalline quality. In particular, the present invention relates to synthetic diamond material exhibiting heretofore unknown low levels of extended defect density with specific controlled point defect densities. [0003] The crystalline integrity of diamonds according to the invention is controlled by a series of synthesis, analysis and processing steps. In the context of the present invention, the term "crystalline quality" relates to the concentration of extended defects such as dislocations and stacking faults, such that a high crystalline quality material contains a low concentration of extended defects. The present invention provides diamonds in which the density of extended defects is controlled and minimized using methods adapted to intentionally doping the material with point defects that may have other benefits in specific applications. Background of the invention [0004] The synt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C30B25/20C30B29/04C30B25/02
Inventor D・J・特维切G・C・萨默顿I・弗里尔J・O・汉森K・B・盖M・P・高克罗吉P・M・玛丁内奥R・C・伯恩斯S・C・罗森T・P・G・艾迪森
Owner EHLEMENT SIKS TECHZ PTI
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