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Metal thermal interfacial material as well as radiating module and encapsulation microelectron containing the material

An interface material, metal heat technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of multi-layer structure thickness not easy to thin, poor interface thermal conductivity, uneven gasket clamping pressure, etc. Effects of Liquid Leakage Problems

Active Publication Date: 2011-11-23
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the multilayer structure metal introduces more thermal conduction interface barriers, and the thickness of the multilayer structure is not easy to thin, and its interface thermal conductivity is not as good as that of a single material low melting point alloy
In addition, many factors can cause the gasket to lose its confinement effect, such as molten liquid phase filling the limited free space in the gasket and then overflowing, uneven clamping force of the gasket, or gasket rupture
Although reducing the thickness of the solid metal thermal interface material (for example, below 30 μm) helps to suppress the leakage of the molten liquid phase, it is more suitable for the second-order thermal interface; if the flatness of the thermal interface surface and the accuracy of assembly alignment do not correspond Improvement, the lower the thickness of the solid low-melting point alloy thermal interface material is below 30 μm, the more likely the problem of incomplete interface bonding will occur

Method used

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  • Metal thermal interfacial material as well as radiating module and encapsulation microelectron containing the material
  • Metal thermal interfacial material as well as radiating module and encapsulation microelectron containing the material
  • Metal thermal interfacial material as well as radiating module and encapsulation microelectron containing the material

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Embodiment Construction

[0037] In order to solve the problem of leakage of the molten liquid phase of the metal thermal interface material at the thermal interface, and to make the metal thermal interface material still able to suppress the liquid phase overflow under the condition of a thicker interface joint thickness, an innovative hollow metal interface material is proposed. thermal interface material. The hollow structure can easily control the quality of the excess liquid phase, so that the appropriate amount of molten liquid phase; in addition, the through-hole structure formed by the hollow structure also has the effect of dispersing the excess liquid phase, preventing it from concentrating at a local location to form a bead-like liquid drop.

[0038] Figure 1-3 Various embodiments of the openworked metal thermal interface material of the present invention are shown. First, in figure 1 In the metal thermal interface material 101, the arrayed through-holes 11 having the same shape are arrang...

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Abstract

The invention provides a metal thermal interface material, which can be arranged between an integrated circuit naked crystal and the interface of a heat conduction path of a radiator; wherein, the metal thermal interface material is a structure with a through hole inside, or is a structure with saw-tooth or wave-like surroundings. The invention also comprises a cooling module containing the metalthermal interface material, and a packaging microelectron.

Description

technical field [0001] The invention relates to a metal thermal interface material (thermal interface material, TIM) with a hollow structure, and a heat dissipation module and a packaged microelectronics using the hollow metal thermal interface material. Background technique [0002] Packaging microelectronics, such as high-brightness light-emitting diodes, power insulated gate transistors, and central processing units, etc., due to the development trend of high power, high speed and / or miniaturization, the heat flux generated by packaging microelectronics is getting higher and higher. This heat flux must be is removed, so that the operating temperature of the packaged microelectronics is lower than its maximum junction temperature (maximum junction temperature), otherwise the performance of the packaged microelectronics will be deteriorated or the package structure will be damaged. In order to solve this overheating problem, the newly developed packaging microelectronics is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/367H01L23/373
CPCH01L2924/0002
Inventor 范元昌陈俊沐翁震灼杜致中黄振东
Owner IND TECH RES INST