Method for manufacturing via hole and metal valley
A technology of metal grooves and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low etching efficiency, and achieve the effect of avoiding the reduction of etching efficiency and avoiding the problems of fence-type silicon and face angles
Inactive Publication Date: 2011-02-02
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0004] The purpose of the present invention is to provide a method for making vias and metal trenches, so as to solve the problem of barrier-type silicon and face angles in traditional metal trenches, and further solve the problem of low etching efficiency caused by separate fabrication of traditional metal trenches and vias
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[0015] Both the via hole and the metal groove of the present invention are made on the silicon substrate, and the via hole communicates with the metal groove. The silicon substrate has a middle barrier layer and a bottom barrier layer, and the silicon substrate is covered with a hard mask layer. see figure 2 In step 1 of the present invention shown, the hard mask layer on the surface of the silicon substrate of the prefabricated metal trench is etched away, so the hard mask layer 61 on the surface of the silicon substrate 1 is a hard mask layer with a certain pattern. The silicon substrate 1 has a middle barrier layer 21 and a bottom barrier layer 22 . see image 3 In Step 2 of the present invention shown, the underlying antireflection film Barc 91 is filled on the surface of the silicon substrate where the hard mask layer is etched away, and the thickness of the filled Barc 91 is equal to the thickness of the hard mask layer 61 . see Figure 4 In step 3 of the present in...
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The invention provides a method for manufacturing a via hole and a metal valley. The via hole and the metal valley are communicated for manufacturing a silicon substrate which is provided with a middle retainer layer and a bottom retainer layer and covered by a hard mask layer. The method comprises the following steps: 1, etching the hard mask layer part on the surface of the silicon substrate ofa prefabricated metal valley; 2, filling a bottom antireflection film on the surface of the silicon substrate removing the etched hard mask layer part; 3, coating light blockage on the surface of thehard mask layer without prefabricating the via hole and the surface of the bottom antireflection film and etching media in the position of the prefabricated via hole to form the via hole; and 4, removing the light blockage and the bottom antireflection film and etching the part above the middle retainer layer of the silicon substrate uncovered by the hard mask layer to form the metal valley. The via hole and the metal valley can be etched continuously to improve the etching efficiency, remove the back-etching of a traditional bottom antireflection film and avoid the problems of a rack-type silicon substrate and facial angles.
Description
technical field [0001] The invention relates to the field of manufacturing semiconductor chip metal wiring, in particular to a method for manufacturing via holes and metal grooves pre-filled with metal on a silicon substrate with an intermediate barrier layer. Background technique [0002] The conventional method for making metal trenches is to further fabricate metal trenches on the substrate on which via holes have been formed. see figure 1 . in such as figure 1 Via holes 7 have been made on the silicon substrate 1 shown. The silicon substrate 1 has a middle barrier layer 21 and a bottom barrier layer 22 . The surface of the non-fabricated via hole 7 on the silicon substrate 1 is covered with a photoresist 4, and the medium of the prefabricated via hole 7 is etched through the photoresist 4: the part of the hard mask layer of the via hole, the part of the silicon substrate above the middle barrier layer of the via hole, and the via hole The intermediate barrier layer ...
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IPC IPC(8): H01L21/768
Inventor 周鸣孔武
Owner SEMICON MFG INT (SHANGHAI) CORP