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Fuse structure for intergrated circuit devices

A technology of fuse structure and wiring structure, applied in the field of fuse structure

Inactive Publication Date: 2010-06-16
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, programming of metal-containing fuses is a problem

Method used

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  • Fuse structure for intergrated circuit devices
  • Fuse structure for intergrated circuit devices
  • Fuse structure for intergrated circuit devices

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Experimental program
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Embodiment Construction

[0026] The purpose of writing this description is to illustrate the general principles of the invention and should not be construed as limiting. The scope of the invention should be determined by reference to the appended claims.

[0027] The present invention is directed to a metal-containing fuse and method of forming the same on a semiconductor substrate. Metal-containing fuses according to the present invention can be used in integrated circuits (ICs) suitable for a variety of applications, such as for redundancy in memory circuits and for custom designs, where a common semiconductor chip can be used for several different applications , depending on the programming of a predetermined set of fuses integrated into the IC.

[0028] Figure 4 and 5 A top view and a cross-sectional view, respectively, of a portion of an integrated circuit 100 including an exemplary fuse structure 101 are illustrated. The fuse structure is formed on a semiconductor substrate 102, which is ty...

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Abstract

A fuse structure for an IC device and methods of fabricating the structure are provided. The fuse structure comprises a metal-containing conductive strip formed over a portion of a semiconductor substrate. A dielectric layer is formed over the semiconductor substrate, covering the conductive strip. A first interconnect and a second interconnect are formed in vias extending through the dielectric layer, each physically and electrically connecting to a part of the conductive layer. First and second wiring structures are formed over the dielectric layer in electrical contact with the first and second interconnects respectively. The contact area between one of the interconnects and the strip is chosen so that electromigration will occur when a pre-selected current is applied to the fuse structure.

Description

technical field [0001] The present invention relates to an integrated circuit (IC) device, and more particularly, to a fuse structure applied in an IC device. Background technique [0002] Fuses are used in many integrated circuits (ICs), such as dynamic random access memory (DRAM) and static random access memory (SRAM). Fuses provide connections for redundant circuit elements that can replace circuit elements with manufacturing defects to ensure the functionality of the overall integrated circuit. Moreover, fuses also allow device manufacturers to select product options, such as voltage options, package pin options, so that a basic product design can be used for a variety of different end products. [0003] Generally, there are two types of fuses used in modern times. In the first type, the fuse element is blown using an external heat source such as a laser beam. In the second type, current flows through the fuse element to blow the fuse. The latter type, ie, an electri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/525H01L23/528H01L21/768
CPCH01L23/5256H01L2924/0002H01L2924/00H01L23/62H01L21/82
Inventor 庄学理郑光茗钟升镇梁孟松
Owner TAIWAN SEMICON MFG CO LTD