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High-power passive Q-switched laser

A laser, high-power technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve problems such as mismatching, multi-mode oscillation, pulse output frequency, energy and pulse waveform instability

Active Publication Date: 2012-05-09
FUZHOU PHOTOP QPTICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to obtain high pulse energy and peak power passively Q-switched lasers, the continuous pumping method is generally used, but passively Q-switched lasers under high-power pumping will easily cause mismatching between the pump light and the fundamental frequency light mode, resulting in multi-mode Oscillation, resulting in poor pulse output stability, the pulse output frequency, energy and pulse waveform are unstable
Therefore, the application of passive Q-switched lasers under the traditional continuous pumping method and high-power pumping in the fields of optical ranging, optical communication, high-speed holography, and medical treatment has been greatly restricted.

Method used

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Embodiment Construction

[0015] The present invention will be further described below in conjunction with accompanying drawing.

[0016] as attached figure 1 As shown in the system structure diagram of the patent of the present invention, a high-power passive Q-switched laser includes an array semiconductor pump laser 101, a pump coupling system 102, a laser gain medium 103 and a passive Q-switched crystal 104, wherein the laser gain medium 103 is made In a trapezoidal shape, the mirror images of the S1 and S2 planes are parallel, and the S1, S2 and S3 planes form a folded parallel plane resonant cavity, that is, the angle between S1 and S3 and the angle between S2 and S3 are both θ, and the θ angle can be adjust. The pumping width of the array semiconductor pump laser 101 entering the laser gain medium 103 is L. The S1 surface of the laser gain medium 103 is coated with a fundamental wave high-reflection film, and the S2 surface is coated with a fundamental wave anti-reflection film. The passive Q-...

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Abstract

The invention discloses a high-power passive Q-switched laser, comprising an array semiconductor pumping layer, a pumping coupling system, a laser gain medium and a passive Q-switched crystal; the high-power passive Q-switched laser is characterized in that the laser gain medium is trapeziform; aiming at different pumping frequencies, the area size of the base mode is adjusted by changing the angle of the trapeziform laser gain medium, thereby obtaining the passive Q-switched pulse output with stable high-pulse energy and high-peak power.

Description

technical field [0001] The patent of the present invention relates to the field of lasers, especially to the field of high-power passive Q-switched lasers. Background technique [0002] Compared with active Q-switched solid-state lasers, passive Q-switched solid-state lasers reduce the complexity of the drive circuit, have the advantages of small size, high efficiency, and low cost, and have good development prospects, and have been widely used in military and other important industries. field. With the development of remote optical ranging, optical communication, high-speed holography and other application technologies, the requirements for pulse energy and peak power of passive Q-switched lasers continue to increase. In order to obtain high pulse energy and peak power passively Q-switched lasers, continuous pumping is generally used, but passively Q-switched lasers under high-power pumping can easily cause mismatching between the pump light and the fundamental frequency l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/30H01S5/04H01S5/065H01S5/024
Inventor 吴励韩晓明杨建阳任策陈卫民
Owner FUZHOU PHOTOP QPTICS CO LTD
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