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Method for polishing semiconductor wafer

A semiconductor and wafer technology, applied in the field of double-sided polishing of semiconductor wafers, can solve problems such as unfavorable polishing machines and wafer fixing systems

Inactive Publication Date: 2013-08-14
SILTRONIC AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0022] In the search for even further improvements to the edge geometry of semiconductor wafers polished according to this method, the present inventors discovered that, particularly in the case of the FAP polishing step using relatively hard and rigid FAP polishing pads, commonly used polishing machines and the wafer holding system is somehow disadvantageous

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  • Method for polishing semiconductor wafer

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Embodiment

[0110] All polishing processes presented below were carried out using monolithic supports (no membrane supports, no multi-region supports) equipped with templates.

[0111] The carrier substrate itself may have a planar, convex or concave shape.

[0112] A 3-plate polisher such as AMAT Reflection from Applied Materials, Inc. was used as the polisher.

[0113] A. Polishing the backside of a semiconductor wafer with workpiece offset:

[0114] An FA polishing pad with an average abrasive grain size of 0.5 μm was used. Abrasive-free polishing compounds such as dilute K are available 2 CO 3 .

[0115] A second partial polishing step of the backside of the semiconductor wafer is optionally carried out on the same polishing pad, but with a supply of silica sol, eg Glanzox 3900, in order to adjust the roughness of the backside of the wafer in a targeted manner.

[0116] B. Polishing the front side of the semiconductor wafer in three steps:

[0117] B.1. Plate 1 equipped with a F...

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Abstract

A method of polishing a semiconductor wafer using a holding system including a lined cutout the size of the semiconductor wafer that is fixed to a carrier. The method includes holding the semiconductor wafer in the cutout through adhesion of a first side of the semiconductor wafer to a bearing surface in the cutout and polishing a second side of the held semiconductor wafer using a polishing pad that is fixed on a polishing plate while introducing a polishing agent between the second side of the semiconductor wafer and the polishing pad, the polishing pad including fixedly bonded abrasive materials. The carrier is guided during polishing such that a portion of the second side of the semiconductor wafer temporarily projects beyond a lateral edge of a surface of the polishing pad.

Description

technical field [0001] The invention relates to a method for polishing a semiconductor wafer on both sides. Background technique [0002] The prior art discloses polishing both sides of a semiconductor wafer with a polishing pad with a supply of polishing agent, for polishing in a material-removing manner (DSP step), and in the other case finally using a softer polishing pad to polish only the front side ("component face"), for so-called fog-free polishing (CMP step, "polishing"), and also discloses the new so-called "Fixed Abrasive Polishing" (FAP) technique, in which semiconductor wafers are polished on polishing pads , however, the polishing pad contains abrasive fixed in the polishing pad ("fixed abrasive pad"). Hereinafter, the polishing step using the above-mentioned FAP polishing pad will be simply referred to as the FAP step. [0003] WO 99 / 55491 A1 describes a two-step polishing method comprising a first FAP polishing step followed by a second CMP polishing step. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302H01L21/304B24B29/02
CPCB24B1/00H01L21/02024
Inventor J·施万德纳T·布施哈尔特R·柯普尔特
Owner SILTRONIC AG
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