Flash memory device and associated method of operation using an adaptive programming verification scheme

Abstract

A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2010-0012894 filed on February 11, 2010 under 35 U.S.C. §119, the disclosure of which is incorporated herein by reference. technical field [0002] Embodiments of the present principles relate generally to semiconductor memory devices. More particularly, embodiments of the present principles relate to flash memory devices and associated methods of operation using adaptive program verification schemes. Background technique [0003] Semiconductor memory plays an important role in many modern electronic devices from satellites to consumer products. Therefore, advances in semiconductor memory technology can lead to significant improvements in a large number of technological applications. [0004] Semiconductor memory devices can be roughly divided into two categories according to whether stored data is maintained when power is turned off. The category includes volatile semiconductor memory devices, whi...

AI Technical Summary

Problems solved by technology

Compared with NAND flash memory, NOR flash memory can provide faster access speed, but has lower storage capacity

Images