Multiple threshold voltage device and manufacturing method thereof
A technology of critical voltage and manufacturing method, applied in the direction of semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of inability to fully meet, reduce geometric size, limitations, etc., and achieve the effect of improving the reliability and performance of components
Active Publication Date: 2014-10-15
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
However, as technology nodes continue to shrink, functional density (ie, the number of integrated components per chip area) has gradually increased, while geometry size (ie, the smallest component (or line) that can be produced using fabrication steps) has decreased
Extending the channel length to accommodate higher threshold voltage devices takes up precious IC device space, limiting the total number of components that can be fabricated in a single chip
In view of this, although the existing methods of manufacturing multi-threshold voltage devices have gradually met their intended purpose, they still cannot fully satisfy all aspects.
Method used
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[0043] Hereinafter, each embodiment is described in detail and examples accompanied by drawings are used as a reference basis of the present invention. In the drawings or descriptions in the specification, the same symbols are used for similar or identical parts. And in the drawings, the shapes or thicknesses of the embodiments may be enlarged, and marked for simplicity or convenience. In addition, the parts of each element in the drawings will be described separately. It should be noted that the elements not shown or described in the drawings are forms known to those of ordinary skill in the art. In addition, specific embodiments are only disclosed The specific mode used in the present invention is not intended to limit the present invention.
[0044] figure 1 A flowchart of a method 100 for manufacturing an integrated circuit device is shown. Method 100 begins at step 102, wherein a substrate is provided. In steps 104 and 106, a first gate of a first device and a second ...
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The invention discloses an integrated circuit device and a manufacturing method of the integrated circuit device. An example method includes providing a substrate on which a first gate for a first device is formed, which has a first threshold voltage characteristic. The first gate includes a first material with a first type of work function. A second gate for the second element is formed on the substrate, which has a second threshold voltage characteristic greater than the first threshold voltage characteristic. The second gate includes a second material having a work function of a second type opposite to the work function of the first type, and means for configuring the first element and the second element as a same channel form. The present invention provides improved component reliability and performance.
Description
technical field [0001] The invention relates to an integrated circuit device and a manufacturing method thereof, in particular to a multi-threshold voltage integrated circuit device and a manufacturing method thereof. Background technique [0002] Multiple threshold voltage integrated circuit devices are commonly used in the semiconductor integrated circuit (IC) industry to optimize latency and power. A multi-threshold voltage IC device may include several different devices, each having a different threshold voltage (ie, operating voltage). For example, the multiple threshold voltage IC device may include a low threshold voltage device and a high threshold voltage device. One approach to achieving the different threshold voltage devices involves optimization of the channel and halo implants. This method is implemented using a heavy ion implantation process to achieve the high threshold voltage devices, using individual masks for each desired threshold voltage. It has been...
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IPC IPC(8): H01L21/8232H01L21/336H01L27/105H01L29/43
CPCH01L29/7833H01L21/266H01L21/823842H01L29/6659H01L21/823807H01L29/0847
Inventor 江忠祐林大文王世维
Owner TAIWAN SEMICON MFG CO LTD