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Cutting method

A cutting method and technology of cutting blades, which are applied in the fields of electrical components, fine working devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of deterioration of processing quality, multiple cracks, large defects, etc., and achieve the effect of reducing the deterioration of processing quality

Active Publication Date: 2012-03-14
DISCO CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, when the wafer is diced in the above-mentioned procedure, it is observed that the plurality of first planned division lines that are cut first have larger defects or more cracks than the plurality of second planned division lines that are cut next. Unfavorable situation, the result sometimes leads to deterioration of processing quality

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Embodiment Construction

[0029] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

[0030] (1) Semiconductor wafer

[0031] figure 1 A state in which a semiconductor wafer (hereinafter simply referred to as a wafer) as a workpiece to be processed is cut by the cutting blade 13 of the cutting unit 10 using the cutting method of one embodiment is shown. Such as figure 2 As shown, on the surface of the wafer 1 , a plurality of dividing lines 2 intersecting each other are formed in a grid pattern, and rectangular device regions 3 divided by these dividing lines 2 are formed.

[0032] On the surface of each device region 3 , an electronic circuit (not shown) made of IC, LSI, or the like is formed. The planned dividing lines 2 dividing the device regions 3 are perpendicular to each other in this embodiment. here, will be in figure 2 In the following description, the planned dividing line extending in the A direction (first direction) is referred to...

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Abstract

The invention provides a cutting method which enables the processing quality deterioration generated on a first cutting proposed line cut firstly to be reduced when a plurality of crossed first and second cutting proposed lines are cut. When cutting is carried out on the latticed first and second cutting proposed lines(2a, 2b) of a diving device region(3) of a cutting semi-conductor wafer(1), not every first cutting proposed line(2a) is cut in a first cutting process cutting the first cutting proposed lines(2a) firstly, at least adjacent first cutting proposed lines(2a) are jumped, namely, every two or every three first cutting proposed lines(2a) are cut, and then after the second cutting proposed lines(2b) are cut in a second cutting process, the surplus first cutting proposed lines(2a) are cut in a third cutting process.

Description

technical field [0001] The present invention relates to a cutting method suitable for use when cutting and dividing a thin plate-shaped workpiece such as a semiconductor wafer with a cutting blade. Background technique [0002] For example, in a semiconductor device manufacturing process, first, on the surface of a wafer made of a semiconductor such as silicon or gallium arsenide (GaAs), a plurality of first planned dividing lines extending in the first direction are formed in a grid pattern, and A plurality of second planned dividing lines extending in a second direction intersecting with the first direction, and then, in a rectangular device region divided by these first planned dividing lines and second planned dividing lines, an IC-based or multiple circuit elements such as LSI. Then, after the back surface of the wafer is ground and thinned to a predetermined thickness, dicing is performed to cut and divide the device region along each planned dividing line, thereby ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/78B28D5/00
Inventor 冯宇伟
Owner DISCO CORP