Non-volatile memory and method for manufacturing same

Abstract

The invention relates to a non-volatile memory and a method for manufacturing the same. The non-volatile memory comprises a substrate, a grid structure, a first doped region, a second doped region and a pair of isolation structures, wherein the grid structure is configured on the substrate and comprises a charge storage structure, a grid and gap walls, the charge storage structure is configured on the substrate, the grid is configured on the charge storage structure, the gap walls are configured on the lateral walls of the grid and the charge storage structure, the first doped region and the second doped region are respectively configured in the substrate at the two sides of the charge storage structure and at least are positioned below the gas walls, the pair of isolation structures are respectively configured in the substrate at the two sides of the grid structure. The invention also provides a method for manufacturing the non-volatile memory. With the adoption of the non-volatile memory and the method for manufacturing the same, a second bit effect and programmed interference during operation of the non-volatile memory can be avoided.

Description

technical field [0001] The invention relates to a non-volatile memory (non-volatile memory) and a manufacturing method thereof, in particular to a non-volatile memory capable of avoiding second bit effects and program disturbances. Memories and methods for their manufacture. Background technique [0002] Since non-volatile memory has the advantage that the stored data will not disappear after the power is turned off, many electrical products must have this kind of memory to maintain the normal operation of the electrical product when it is turned on. In particular, flash memory (flash memory) has become a memory element widely used in personal computers and electronic devices due to its ability to perform operations such as storing, reading, and erasing data multiple times. [0003] Nitride-based flash memory (nitride-based flash memory) is a common non-volatile memory at present. In the nitride flash memory, a charge trapping structure composed of an oxide layer-nitride l...

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Problems solved by technology

[0004] However, there is a second bit effect in nitride flash memory, that is, when the left bit is read, it will be affected by the right bit, or when the right bit is read, will be affected by the left bit

In addition, as the size of the memory shrinks, the length of the channel is also shortened, causing the second bit effect to be more significant, thus affecting the operation window and device performance of the memory.

In addition, due to the gradual reduction of the size of the memory, the distance between the components is also shortened, so the problem of programming interference is also prone to occur when adjacent memories are programmed.

[0005] It can be seen that the above-mentioned existing non-volatile memory obviously still has inconvenience and defects in product structure and use, and needs to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve

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