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Non-volatile memory and its manufacturing method

A non-volatile, manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve programming interference, affect the performance of operating margin components, general products and methods have no suitable structure and methods, etc.

Active Publication Date: 2015-09-16
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, there is a second bit effect in Nitride ROM, that is, when a read operation is performed on the left bit, it is affected by the right bit, or when a read operation is performed on the right bit, it is affected by left bit effect
In addition, as the size of the memory gradually shrinks, the length of the channel in the memory cell is also shortened, causing the second bit effect to be more significant, thus affecting the operation window and device performance.
[0005] In addition, as the size of the memory is gradually reduced, the distance between the memory cells is also shortened, so the problem of programming interference is also prone to occur when adjacent memory cells are programmed.
[0006] It can be seen that the above-mentioned existing non-volatile memory obviously still has inconvenience and defects in product structure and use, and needs to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve

Method used

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  • Non-volatile memory and its manufacturing method

Examples

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no. 1 example

[0050] Figure 1A to Figure 1D It is a schematic cross-sectional view of the manufacturing process of the non-volatile memory according to the first embodiment of the present invention. First, see Figure 1A As shown, an oxide layer 102 having a protrusion 102 a is formed on a substrate 100 . The method for forming the oxide layer 102 is, for example, to firstly form an oxide material layer on the substrate 100 . The method for forming the oxide material layer is, for example, chemical vapor deposition. Then, a patterned mask layer 104 is formed on the oxide material layer. The patterned mask layer 104 covers the area of ​​the oxide layer 102 where the protrusions are to be formed. Next, an isotropic etching process is performed by using the patterned mask layer 104 as a mask to remove part of the oxide material layer until the substrate 100 is exposed to form the protruding portion 102a. In this embodiment, since the oxide layer 102 not covered by the patterned mask layer...

no. 2 example

[0057] Figure 2A to Figure 2C It is a schematic cross-sectional view of the manufacturing process of the non-volatile memory according to the second embodiment of the present invention. First, see Figure 2A As shown, an oxide layer 202 having a protrusion 202 a is formed on a substrate 200 . The method for forming the oxide layer 202 is, for example, to firstly form an oxide material layer on the substrate 200 . The method for forming the oxide material layer is, for example, chemical vapor deposition. Then, a patterned mask layer 204 is formed on the oxide material layer. The patterned mask layer 204 covers the area of ​​the oxide layer 202 where the protrusions are to be formed. Next, an isotropic etching process is performed by using the patterned mask layer 204 as a mask to remove part of the oxide material layer without exposing the base 200 to form the protruding portion 202a.

[0058] Then, see Figure 2B As shown, using the patterned mask layer 204 as a mask, a...

no. 3 example

[0062] Figure 3A to Figure 3D It is a schematic cross-sectional view of the manufacturing process of the non-volatile memory according to the third embodiment of the present invention. First, see Figure 3A As shown, an oxide layer 302 having a protrusion 302 a is formed on a substrate 300 . The method for forming the oxide layer 302 is, for example, to form an oxide material layer on the substrate 300 first. The method for forming the oxide material layer is, for example, chemical vapor deposition. Then, a patterned mask layer 304 is formed on the oxide material layer. The patterned mask layer 304 covers the area of ​​the oxide layer 302 where the protrusions are to be formed. Next, using the patterned mask layer 304 as a mask, an isotropic etching process is performed to remove part of the oxide material layer without exposing the base 300 to form the protruding portion 302a.

[0063] Then, see Figure 3B As shown, a pair of nitride spacers 306 are formed on the patte...

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Abstract

The invention relates to a non-volatile memory and a manufacturing method thereof. The manufacturing method of the non-volatile memory comprises the following steps of: forming a first oxide layer provided with a bump on a substrate; forming a pair of doping areas in the substrate on both sides of the bump; forming a pair of charge storing gap walls on the side wall of the bump; forming second oxide layers on the first oxide layer and the charge storing gap walls; and forming a conductor layer on the second oxide layer. Meanwhile, the invention further provides a non-volatile memory manufactured by using the method. The charge storing gap walls formed on the side wall of the oxide bump is taken as charge storing areas, so that charges can be effectively limited in the charge storing gap walls respectively, a second bit effect generated during reading is avoided, and the problem of programmed interference caused by programmed operation of adjacent memory cells is avoided.

Description

technical field [0001] The present invention relates to a non-volatile memory (non-volatile memory, NVM) and a manufacturing method thereof, in particular to a non-volatile memory that can avoid second bit effects and program disturbances Non-volatile memory and its manufacturing method. Background technique [0002] Since non-volatile memory has the advantage that the stored data will not disappear after the power is turned off, many electrical products must have this kind of memory to maintain the normal operation of the electrical product when it is turned on. [0003] Nitride read only memory (read only memory, ROM) is a common non-volatile memory at present. In the memory cell of the nitride read-only memory, the data of two bits can be stored by using the charge trapping structure formed by the nitride layer. In general, two bits of data can be stored on the left side (ie, left bit) or right side (ie, right bit) of the charge trapping structure, respectively. [000...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L27/115H10B69/00
Inventor 郑致杰
Owner MACRONIX INT CO LTD