Method for cleaning crystalline silicon

A crystalline silicon, pre-cleaning technology, applied in the direction of using liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve the problems of secondary pollution of impurities, local oxidation, large loss of silicon materials, etc., to reduce corrosion Loss, waste liquid treatment is easy, and the effect of reducing treatment work

Inactive Publication Date: 2012-12-19
ZHEJIANG YUHUI SOLAR ENERGY SOURCE
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  • Abstract
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Problems solved by technology

However, traditional cleaning methods have a certain effect on primary silicon, but for recycled materials, not only cannot completely remove impurities and dirt on the surface, but also produce secondary pollution and local oxidation of some impurities on the surface of silicon materials. and other phenomena
Moreover, the traditional cleaning methods use many types of chemicals and high concentrations, which not only cause great harm to people, equipment, and the environment, but also cause a large loss of silicon materials and increase the difficulty of waste liquid treatment. Therefore, improving Reduced cleaning cost and cleaning difficulty

Method used

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  • Method for cleaning crystalline silicon

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Embodiment Construction

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] As mentioned in the background technology section, the traditional cleaning method has a certain effect on virgin silicon, but the cleaning effect is not good for recycled materials. of. The traditional cleaning method uses a mixed acid solution to corrode crystalline silicon, which mainly considers the chemical properties of impurities on the surface of crystalline silicon. Therefore, the traditional cleaning method uses many types of chemicals and hig...

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Abstract

The embodiment of the invention discloses a method for cleaning crystalline silicon, which comprises the following steps: placing crystalline silicon in pure water to carry out ultrasonic or mega-sound heating pre-cleaning; placing the crystalline silicon in a mixed acid solution to carry out corrosion; cleaning the crystalline silicon by the pure water; and drying the crystalline silicon. The crystalline silicon cleaning method adopts a combination manner of physic cleaning and chemical cleaning to clean the crystalline silicon, can effectively remove the impurities and particles on the surface of crystalline silicon (especially reclaimed materials) and can reduce the amount of the chemical solution, the damage of the chemical solution to the human body, equipment and environment, the corrosion loss of the chemical solution to the crystalline silicon and the follow-up treatment of the waste solution, thereby reducing the cleaning cost.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing technology, and more specifically, relates to a method for cleaning crystalline silicon. Background technique [0002] In recent years, due to the rapid development of solar photovoltaic power generation technology, the demand for crystalline silicon has continued to rise, which has caused many solar silicon wafer manufacturers to use unqualified products, scrapped products and cut-off products in the production process of silicon semiconductor components. The leftover materials are used as recycled materials, which are used for the production of solar-grade crystalline silicon after treatment. In the production process of solar-grade crystalline silicon, because the silicon material needs to be melted again, and the silicon material at high temperature is easy to react with the crucible, impurity gas, etc., which will cause part of the silicon material to be cut off during the si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02B08B3/10B08B3/12H01L31/18
CPCY02P70/50
Inventor 郭江涛
Owner ZHEJIANG YUHUI SOLAR ENERGY SOURCE
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