Unlock instant, AI-driven research and patent intelligence for your innovation.

Wafer defect scanning method and wafer defect scanning machine

A defect scanning, wafer technology, applied in the direction of optical testing flaws/defects, etc., can solve problems such as difficult to capture, abnormal fixed point line width, etc., to achieve the effect of improving the ability to capture and strengthen the ability to capture defects

Active Publication Date: 2015-07-29
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when this scanning method is abnormal for the entire wafer, that is, the fifth pixel 105 is compared with the fourth pixel 104 and the sixth pixel 106. At this time, since the unit pixels adjacent to the fifth pixel 105 all Abnormal, there is no difference after comparison, which makes it impossible to define a defect
For example, excessive chemical mechanical polishing of wafers, abnormal fixed point line width, etc., are difficult to capture defects with this method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer defect scanning method and wafer defect scanning machine
  • Wafer defect scanning method and wafer defect scanning machine
  • Wafer defect scanning method and wafer defect scanning machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention is described below in conjunction with embodiment.

[0021] figure 2 The relationship between the unit pixel 203 , the wafer 201 and the unit chip 202 mentioned in the embodiment of the present invention is shown.

[0022] like image 3 As shown in the flow chart of the present invention, the steps of the wafer defect scanning method in the embodiment of the present invention include:

[0023] In step 301, the unit pixel with the highest frequency of occurrence at each position on each wafer of a certain station on the assembly line is counted, and the unit pixel with the highest frequency of occurrence is assigned to the corresponding position on the virtual wafer to obtain a virtual perfect wafer And save the virtual perfect wafer; the wafers passing through a certain station on the wafer processing line should have consistent morphological characteristics, so it is meaningful to carry out statistics at the same station, and the morphologies a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for scanning wafer defects, which comprises the steps of: calculating to obtain the most frequent unit pixels of various positions on various wafers of some station on a production line and applying to corresponding positions on a virtual wafer to obtain a virtual perfect wafer, and storing the virtual perfect wafer; comparing the stored virtual perfect wafer with the wafer of some station on the production line; and detecting defects of the wafer layer. Furthermore, the invention discloses a machine for scanning wafer defects, including the method for scanning wafer defects. According to the scanning method, a defect scanning way of comparing the virtual perfect wafer and the wafer is added, thereby enhancing the ability of the scanning machine to catch the defects.

Description

technical field [0001] The invention relates to the field of semiconductor yield improvement, in particular to a wafer defect scanning method and a wafer defect scanning machine. Background technique [0002] With the development of semiconductor device technology, defect detection has become an indispensable means to improve semiconductor yield. At present, the industry generally uses the method of comparing adjacent unit pixels to capture defects. But there are some defects that will appear on the whole wafer, which are called abnormal defects of the whole wafer. [0003] Today's defect scanning method is by comparing adjacent unit pixels (up and down or left and right). If there is a difference, define the difference as a defect, such as figure 1 After comparing the second unit pixel 102 with the adjacent first unit pixel 101 and the third unit pixel 103 , it can be known that the second unit pixel 102 has a defect. However, when this scanning method is abnormal fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/88
Inventor 郭贤权许向辉顾珍
Owner SHANGHAI HUALI MICROELECTRONICS CORP