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Ion beam concentration detection method and ion beam detection system

A technology of ion beam and concentration, applied in radiation measurement, measuring device, X/γ/cosmic radiation measurement, etc., can solve problems such as inaccurate detection results, reduce costs, avoid abnormal scrapping, reduce maintenance and machine maintenance The effect of station frequency

Active Publication Date: 2016-03-09
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in this traditional detection method, the interval between every two sampling points is actually a blind area of ​​detection, so the detection result is inaccurate

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  • Ion beam concentration detection method and ion beam detection system
  • Ion beam concentration detection method and ion beam detection system
  • Ion beam concentration detection method and ion beam detection system

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Embodiment Construction

[0018] In order to make the objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0019] The ion implantation process is an important process in the semiconductor manufacturing process. For ease of use and control, most ion sources in ion implantation are gaseous sources. The dopant atoms are ionized, separated, and accelerated to form an ion beam, which bombards the wafer and penetrates into the wafer. The implanted impurity ions will change the sheet resistance of the wafer surface.

[0020] The ionization process takes place at low pressure (e.g. about 10 -3 Torr) and in the ionization reaction chamber with the ion source in the vapor state. The reaction chamber includes a metal plate as an anode and a filament as a cathode. The filament maintains a large negative potential relative to the metal plate, and its surfa...

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Abstract

The invention relates to an ion beam detection system which comprises a detector, a two-dimensional driving module, a controller and a processor. The controller is used for sending control commands for the two-dimensional driving module, the two-dimensional driving module is used for driving the detector to move in a two-dimensional plane according to the control commands, the detector is used for measuring the current formed by ion beams, the processor is used for calculating to obtain areas of the ion beams according to current concentration information and sampling site position information of the ion beams, the current concentration information and the sampling site position information are detected by the detector, and the ionic concentration is obtained by dividing the current by the areas of the ion beams according to the current concentration information. The invention further relates to an ion beam concentration detection method. By means of the ion beam concentration detection method and the ion beam detection system, shapes and quality of the ion beams can be effectively and accurately detected, so that technologists can timely and effectively control an on-line process, timely find out defects of the ion beams and take measures for preventing and avoiding abnormal scrapping. The frequency of machine maintaining and repairing by equipment workers is lowered, and cost is reduced.

Description

【Technical field】 [0001] The invention relates to ion implantation technology, in particular to a method for detecting ion beam concentration, and also relates to an ion beam detection system. 【Background technique】 [0002] In the ion implantation process of semiconductor manufacturing, the ion implantation high-current machine obtains a ribbon beam (ribbon beam) through a series of adjustments to the ion source, electric field acceleration, and magnetic field. By moving the wafer (wafer) perpendicular to the emission direction of the ribbon ion beam, the entire wafer can be ion-implanted. Ribbon ion beam is an ion beam generated by ion implantation high-current equipment. It is characterized in that the cross section of the ion beam is ribbon-shaped, with a certain height and width. Therefore, it is difficult to detect the current uniformity of each part of the entire ribbon ion beam. [0003] A traditional detection method is that the machine uses a profiler to take seve...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/244H01J37/317G01T1/29
Inventor 张伟
Owner CSMC TECH FAB2 CO LTD