Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacturing method thereof

A technology of semiconductors and conductive wires, applied in the field of semiconductor devices and their manufacturing, capable of solving problems affecting device operation speed or refresh characteristics

Active Publication Date: 2018-07-06
SAMSUNG ELECTRONICS CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High load capacitance can adversely affect the operating speed or refresh characteristics of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Hereinafter, various embodiments of the inventive concept and examples of the embodiments will be described more fully with reference to the accompanying drawings. In the drawings, the size and relative sizes and shapes of elements, layers and regions (eg, implanted regions) shown in cross-section may be exaggerated for clarity. In particular, cross-sectional views of semiconductor devices and intermediate structures fabricated during their fabrication are schematic. In addition, the same reference numerals are used to designate the same elements throughout the drawings.

[0038] Unless otherwise defined, all terms (including technical and scientific terms) used herein are to be interpreted as commonly used in the field to which this invention belongs. It will also be understood that, unless expressly defined herein, terms in common usage should also be interpreted as that which is customary in the relevant art, without idealistic or overly formal interpretation of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stacked structure of conductive wires and insulating covering wires extending in a first direction on a substrate; a plurality of contact plugs arranged in rows along the first direction and having sidewall surfaces facing the conductive wires; There is an air space between the surface and the conductive wire; a support is provided between the insulating covering wire and the contact plug to limit the height of the air space. The width of the support changes along the first direction or the support exists discontinuously only along the first direction. In a method of manufacturing a semiconductor device, a sacrificial spacer is formed on the side of a stacked structure, the spacer is recessed, a support layer is formed in the recess, the support layer is etched to form the support, and the remaining part of the spacer is removed to provide air space.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2012-0098852 filed with the Korean Intellectual Property Office on Sep. 6, 2012, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] The inventive concept relates to a semiconductor device and a method of manufacturing the same. More particularly, the inventive concept relates to a semiconductor device including a plurality of conductive lines disposed adjacent to each other and buried contacts adjacent to the conductive lines and a method of manufacturing the same. For example, the inventive concept relates to a semiconductor device including a plurality of bit lines and contact plugs juxtaposed with the bit lines and a method of manufacturing the same. Background technique [0003] The increase in the integration density of semiconductor devices has caused the shrinking of the design rules of elements of the semiconductor devices. While satisfyi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/105H01L21/8232
CPCH01L2924/0002H01L23/522H01L23/53295H01L21/76229H01L21/76897H01L21/7682H10B12/482H01L2924/00H01L21/28H10B99/00H10B12/00H01L23/49811H01L21/76885H01L23/5222
Inventor 黄有商郑铉雨金大益
Owner SAMSUNG ELECTRONICS CO LTD