Schottky diodes employing recesses for elements of junction barrier arrays

Abstract

The present disclosure generally relates to a Schottky diode having a substrate, a drift layer provided over the substrate, and a Schottky diode provided over an active region of the substrate. Grassroots level. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of the junction barrier array are typically doped regions in the drift layer. To increase the depth of these doped regions, individual recesses may be formed in the surface of the drift layer in which the elements of the junction barrier array are to be formed. Once the recesses are formed in the drift layer, areas near and at the bottom of the recesses are doped to form corresponding elements of the junction barrier array.

Description

[0001] Cross References to Related Applications [0002] This application is related to U.S. Utility Patent Application No. entitled "SCHOTTKY DIODE" filed herewith; , the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] The present disclosure relates to semiconductor devices. Background technique [0004] Schottky diodes utilize a metal-semiconductor junction, which provides a Schottky barrier and is created between a metal layer and a doped semiconductor layer. For a Schottky diode with an N-type semiconductor layer, the metal layer acts as the positive electrode, and the N-type semiconductor layer acts as the negative electrode. In general, Schottky diodes behave like traditional p-n diodes by easily passing current in the forward biased direction and blocking current in the reverse biased direction. The Schottky barrier provided at the metal-semiconductor junction offers two distinct advantages over p-n diodes. First, ...

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Problems solved by technology

[0005] Unfortunately, Schottky diodes have traditionally suffered from relatively low reverse bias voltage ratings and high reverse bias leakage currents

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