Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fourth-order double-vortex type hyper-chaotic circuit of cellular neural network

A neural network and hyper-chaotic technology, applied in the field of nonlinear circuits, can solve the problems such as the inability to realize the hyper-chaos of double-vortex-type cellular neural networks and the inability to realize the hyper-chaos of high-order cellular neural networks.

Inactive Publication Date: 2015-02-18
SHANDONG FOREIGN LANGUAGES VOCATIONAL COLLEGE
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The neural network chaotic circuit is an important part of the nonlinear circuit. Its patent No. 200810129213.9 is "a switchable multi-type third-order chaotic combined circuit and its use method". The fifth circuit is a fourth-order dual Vortex-type cellular neural network hyperchaotic circuit, composed of eight-stage operational amplifiers, can only realize third-order cellular neural network chaos, and cannot realize high-order cellular neural network hyperchaos, super-chaos is high-order chaos, and cannot realize double-vortex type Hyperchaos in Cellular Neural Networks is a Shortcoming of Existing Circuit Technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fourth-order double-vortex type hyper-chaotic circuit of cellular neural network
  • Fourth-order double-vortex type hyper-chaotic circuit of cellular neural network
  • Fourth-order double-vortex type hyper-chaotic circuit of cellular neural network

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Refer to attached figure 1 , the embodiment of the present invention is composed of seven operational amplifiers and resistors and capacitors, wherein: the first operational amplifier A 1 inverting input terminal with the first resistor R 1 connection, the non-inverting input terminal is grounded, and the second resistor R is connected between the inverting input terminal and the output terminal 2 , the output terminal with the fifth resistor R 5 , the third resistor R 3 , the eighth resistor R 8 connection; second op amp A 2 The inverting input terminal and the third resistor R 3 Connection, the non-inverting input terminal is grounded, and the fourth resistor R is connected between the inverting input terminal and the output terminal 4 , the output terminal with the sixth resistor R 6 connection; third operational amplifier A 3 Inverting input terminal with fifth resistor R 5 , the sixth resistor R 6 , the seventh resistor R 7 Connection, the non-inverting ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a fourth-order double-vortex type chaotic circuit. The fourth-order double-vortex type chaotic circuit is characterized in that a third operational amplifier A<3>, a fourth operational amplifier A<4>, a fifth operational amplifier A<5> and a seventh operational amplifier A<7> of the fourth-order double-vortex type chaotic circuit form linear reversed-phase integrators, and output ends of the third operational amplifier A<3>, the fourth operational amplifier A<4>, the fifth operational amplifier A<5> and the seventh operational amplifier A<7> are chaotic signal output ends X<1>, X<2>, X<3> and X<4> respectively; a second operational amplifier A<2> forms a nonlinear reversed-phase amplifier; a first operational amplifier A<1> and a sixth operational amplifier A<6> form linear reversed-phase limiting amplifiers; the reversed-phase integrator A<3> is connected with the reversed-phase amplifier A<1>; the reversed-phase integrator A<4> is connected with the reversed-phase integrators A<3> and A<5>; the reversed-phase integrator A<5> is connected with the reversed-phase integrator A<4>and the reversed-phase amplifier A<6>; the reversed-phase integrator A<7> is connected with the reversed-phase integrator A<4>. The fourth-order double-vortex type chaotic circuit has the advantages that the fourth-order double-vortex type chaotic circuit is a chaotic circuit, accordingly, various waveforms, phase diagrams and chaotic evolution curves of the fourth-order chaotic circuit of a neural network can be outputted, and chaotic security communication systems can be formed.

Description

technical field [0001] The invention belongs to a nonlinear circuit, which is often called a chaotic circuit, and specifically relates to a fourth-order double-vortex type cellular neural network hyperchaotic circuit. Background technique [0002] The neural network chaotic circuit is an important part of the nonlinear circuit. Its patent No. 200810129213.9 is "a switchable multi-type third-order chaotic combined circuit and its use method". The fifth circuit is a fourth-order dual Vortex-type cellular neural network hyperchaotic circuit, composed of eight-stage operational amplifiers, can only realize third-order cellular neural network chaos, and cannot realize high-order cellular neural network hyperchaos, super-chaos is high-order chaos, and cannot realize double-vortex type Cellular neural network hyperchaos is the deficiency of existing circuit technology. Contents of the invention [0003] The purpose of the present invention is to solve the above problems and prov...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G09B23/18
CPCG09B23/183
Inventor 杜琳许崇芳张新国孙洪涛吕涛费静雯
Owner SHANDONG FOREIGN LANGUAGES VOCATIONAL COLLEGE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com