how to extract mom capacitor
An extraction method and technology for capacitors, applied in capacitors, circuits, electrical components, etc., can solve the problems of low efficiency, long time, and slow extraction speed, and achieve the effect of avoiding waste chips, improving extraction speed, and shortening design cycle.
Active Publication Date: 2018-06-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0014] When extracting these MOM capacitors, the traditional method needs to be extracted 28 times to distinguish different MOM capacitor structures, resulting in slower extraction speed, longer time-consuming and lower efficiency
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0047] In order to make the purpose and features of the present invention more obvious and understandable, the specific implementation of the present invention will be further described below in conjunction with the accompanying drawings. However, the present invention can be implemented in different forms and should not be limited to the described embodiments.
[0048] Please refer to figure 1 , the invention provides a kind of extraction method of MOM capacitor, comprising:
[0049] S1, identifying the MOM capacitor from the layout of the integrated circuit;
[0050] S2, the two areas where the stacked metals of the MOM capacitor are connected together are defined as two electrode pins connected to the outside of the MOM capacitor, and each layer of stacked metal has its corresponding auxiliary layer;
[0051] S3, expanding a virtual fence layer around the two electrode pins, using the virtual fence layer to establish a connection relationship between the MOM capacitor and ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides an extracting method for an MOM capacitor. The extracting method comprises the steps of identifying an MOM capacitor region from an integrated circuit layout; then taking a region where overlapped metals of the MOM capacitor are connected as electrode pins, wherein the electrode pins comprise all external connection possibilities of the MOM capacitor; then establishing a virtual wall area for surrounding the MOM capacitor in the periphery of the electrode pins; correctly establishing connection relations between the MOM capacitor and the external connecting lines by the virtual wall area, so as to correctly examine connecting characters of all possibly combined MOM capacitor structures, so that the trouble of traversing all possibly combined overlapped metal structures is avoided, the extracting speed of the MOM capacitor structure is improved, and waste wafer sheets caused by wafers with wrong production connection relations in the technical process of production can be avoided at the same time.
Description
technical field [0001] The invention relates to the field of integrated circuit design, in particular to a method for extracting MOM capacitors. Background technique [0002] Capacitors are important components in integrated circuits (abbreviated as ICs), and are widely used in chips such as memories, microwaves, radio frequencies, smart cards, and filters. With the continuous improvement of semiconductor integrated circuit manufacturing technology, the performance of semiconductor devices is also continuously improved. In the process of increasing the integration level of integrated circuits, how to obtain high-density capacitance in a limited area has become an important issue for capacitors. Existing capacitors generally include: junction capacitors, gate capacitors, metal-metal (Intra-metal) capacitors, and the like. Among them, in the case of high capacitance density, the linearity and quality factor of junction capacitors and gate capacitors are poor, and the breakdo...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L28/40
Inventor 曹云于明郑舒静林晓帆闵旖旎许猛勇卢友梅方淑凤
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP